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Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

A. Georgakilas ,
J. Stoemenos ,
K. Tsagaraki ,
Ph. Komninou ,
N. Flevaris ,
P. Panayotatos  and
A. Christou
A. Georgakilas
Affiliation:
Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas (FORTH), P.O. Box 1527, 711 10 Heraklion, Crete, Greece
J. Stoemenos
Affiliation:
Physics Department, Aristotle University of Thessaloniki, 540 06 Thessaloniki, Greece
K. Tsagaraki
Affiliation:
Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas (FORTH), P.O. Box 1527, 711 10 Heraklion, Crete, Greece
Ph. Komninou
Affiliation:
Physics Department, Aristotle University of Thessaloniki, 540 06 Thessaloniki, Greece
N. Flevaris
Affiliation:
Physics Department, Aristotle University of Thessaloniki, 540 06 Thessaloniki, Greece
P. Panayotatos
Affiliation:
Department of Electrical and Computer Engineering, Rutgers University, P.O. Box 909, Piscataway, New Jersey 08855-0909 and Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas (FORTH), P.O. Box 1527, 711 10 Heraklion, Crete, Greece
A. Christou
Affiliation:
CALCE Electronic Packaging Research Center, Microelectronics Devices Laboratory, University of Maryland, College Park, Maryland 20742
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Abstract

A comprehensive investigation of antiphase domain boundaries (APB's) in GaAs-on-Si is presented. A comprehensive experimental approach, based on complementary electron microscopy (TEM and SEM) and chemical etch techniques, is developed and used in the study of the structural evolution of APB's on vicinal (001)Si substrates. The question of whether a GaAs selective nucleation or APB annihilation accounts for the absence of APB's in thick GaAs/Si films, grown on substrates misoriented from (001) toward (110), is addressed. APB's are revealed by two different TEM techniques to exist in the first interfacial layers of GaAs/Si even in samples considered to be “APB free”. The APB annihilation mechanism is illustrated in GaAs films grown on substrates misoriented toward (100), either directly, by cross-sectional TEM observations, or indirectly, by combined chemical etch/SEM experiments. In addition, the structural characteristics of APB's and their interaction with other extended crystal defects are clarified by XTEM and TEM observations. Finally, the influence of APB's on GaAs/Si surface morphology and their electrical activity are shown explicitly for the first time.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 8 , August 1993 , pp. 1908 - 1921
Copyright
Copyright © Materials Research Society 1993

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