7 results
Effect of strain on Ni-(GeSn)x contact formation to GeSn nanowires
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1707 / 2014
- Published online by Cambridge University Press:
- 10 June 2014, mrss14-1707-uu06-03
- Print publication:
- 2014
-
- Article
- Export citation
Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C2.3
- Print publication:
- 2004
-
- Article
- Export citation
Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 745 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, N4.9
- Print publication:
- 2002
-
- Article
- Export citation
Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 745 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, N4.8
- Print publication:
- 2002
-
- Article
- Export citation
Phosphorus diffusion in silicon; influence of annealing conditions
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J3.9
- Print publication:
- 2001
-
- Article
- Export citation
Diffusion of Phosphorus in Strained Si/SiGe/Si Heterostructures
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 568 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 271
- Print publication:
- 1999
-
- Article
- Export citation
Silicon carbide grown by liquid phase epitaxy in microgravity
-
- Journal:
- Journal of Materials Research / Volume 13 / Issue 7 / July 1998
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1812-1815
- Print publication:
- July 1998
-
- Article
- Export citation