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Diffusion of Phosphorus in Strained Si/SiGe/Si Heterostructures

Published online by Cambridge University Press:  10 February 2011

A. Yu. Kuznetsov ,
J. S. Christensen ,
M. K. Linnarsson ,
B. G. Svensson ,
H. H. Radamson ,
J. Grahn  and
G. Landgren
A. Yu. Kuznetsov
Affiliation:
Royal Institute of Technology (KTH), Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden; kuznet@ele.kth.se
J. S. Christensen
Affiliation:
Royal Institute of Technology (KTH), Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
M. K. Linnarsson
Affiliation:
Royal Institute of Technology (KTH), Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
B. G. Svensson
Affiliation:
Royal Institute of Technology (KTH), Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
H. H. Radamson
Affiliation:
Royal Institute of Technology (KTH), Semiconductor Laboratory, Electrum 229, S 164 40 Kista-Stockholm, Sweden
J. Grahn
Affiliation:
Royal Institute of Technology (KTH), Semiconductor Laboratory, Electrum 229, S 164 40 Kista-Stockholm, Sweden
G. Landgren
Affiliation:
Royal Institute of Technology (KTH), Semiconductor Laboratory, Electrum 229, S 164 40 Kista-Stockholm, Sweden
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Abstract

Phosphorus diffusion in a biaxially compressed Si0.87Ge0.13 film has been investigated in the temperature range of 810–900°C. A significant enhancement of the P diffusion in the biaxially compressed Si0.87Ge0.13 in comparison with P diffusion in Si is observed. Injection of Si self-interstitials (I) during oxidation of a Si-cap in Si/Si0.87Ge0.13/Si heterostructures is used to characterize the atomic mechanism of P diffusion in Si0.87Ge0.13. It is found that the upper limit of the interstitial fraction of the P diffusion in Si0.87Ge0.13 is 0.87 of that in Si. A comparison between B and P diffusivities in SiGe supports the hypothesis of the pairing-controlled mechanism for the diffusion of B in SiGe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 271
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Harame, D.L., Comfort, J.H., Cressler, J.D., Crabbé, E.F., Sun, J.Y.-C., Meyerson, B.S., and Tice, T., IEEE Trans.ED, 42, 455 (1995).Google Scholar
2. Cowern, N.E.B., Zalm, P.C., Gravesteijn, D.J. and Boer, W.B. de, Phys.Rev.Lett. 72, 2585 (1994).Google Scholar
3. Kuo, P., Hoyt, J.L., Gibbson, J.F., Turner, J.E. and Lefforge, D., Appl.Phys.Lett. 66, 580 (1995).Google Scholar
4. Kringhøj, P., Larsen, A. Nylandsted and Shirayev, S.Yu., Phys.Rev.Lett, 76, 3372(1996).Google Scholar
5. Kuznetsov, A.Yu., Cardenas, J., Svensson, B.G., Hansen, J. Lundsgaard, and Larsen, A. Nylandsted, Phys. Rev. B. 59, 7274 (1999).Google Scholar
6. Hu, S.M., Ahlgren, D.C., Ronsheim, P.A., and Chu, J.O., Phys.Rev.Lett. 67, 1450 (1991).Google Scholar
7. Aziz, M.J., Appl. Phys. Lett. 70, 2810 (1997).Google Scholar
8. Kuznetsov, A.Yu., Cardenas, J., Grahn, J., Svensson, B.G., Hansen, J. Lundsgaard, and Larsen, A. Nylandsted, Phys. Rev. B. 58, R13355 (1998).Google Scholar
9. Kuo, P., Hoyt, J.L., Gibbson, J.F., Turner, J.E. and Lefforge, D., Appl.Phys.Lett. 67, 706 (1995).Google Scholar
10. Kuo, P., Hoyt, J.L., Gibbson, J.F., Turner, J.E. and Lefforge, D., Mat.Res.Soc.Symp.Proc. 379, 373 (1995).Google Scholar
11. Fahey, P.M., Griffin, P.B. and Plummer, J.D., Rev.Mod.Phys. 61, 289 (1989).Google Scholar
12. Hu, S.M., J.Appl.Phys. 45, 1567 (1974).Google Scholar
13. Dunlap, W.C. Jr., Phys.Rev. 94, 1531 (1954).Google Scholar
14. Zhao, Y., Aziz, M.J., Gossmann, H.-J., Mitha, S. and Schiferl, D., Appl.Phys.Lett. 74, 31 (1999).Google Scholar