11 results
Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications
-
- Journal:
- MRS Advances / Volume 1 / Issue 2 / 2016
- Published online by Cambridge University Press:
- 26 January 2016, pp. 91-102
- Print publication:
- 2016
-
- Article
- Export citation
Combined Application of Section and Projection Topography to Defect Analysis in PVT-Grown 4H-SiC
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1433 / 2012
- Published online by Cambridge University Press:
- 13 June 2012, mrss12-1433-h03-06
- Print publication:
- 2012
-
- Article
- Export citation
Synchrotron Topography Studies of Growth and Deformation-Induced Dislocations in 4H-SiC
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1433 / 2012
- Published online by Cambridge University Press:
- 13 June 2012, mrss12-1433-h03-03
- Print publication:
- 2012
-
- Article
- Export citation
Effects of dislocations and sub-grain boundaries on X-ray response maps of CdZnTe radiation detectors
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1341 / 2011
- Published online by Cambridge University Press:
- 11 August 2011, mrss11-1341-u05-02
- Print publication:
- 2011
-
- Article
- Export citation
Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride–silicon carbide alloy transition layer
-
- Journal:
- Journal of Materials Research / Volume 22 / Issue 3 / March 2007
- Published online by Cambridge University Press:
- 03 March 2011, pp. 675-680
- Print publication:
- March 2007
-
- Article
- Export citation
Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B12-03
- Print publication:
- 2006
-
- Article
- Export citation
The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 9 / 2004
- Published online by Cambridge University Press:
- 13 June 2014, e6
- Print publication:
- 2004
-
- Article
-
- You have access
- HTML
- Export citation
Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 722 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, K1.1
- Print publication:
- 2002
-
- Article
- Export citation
The Mechanism of Twinning in Zincblende Structure Crystals: New Insights on Polarity Effects From a Study of Magnetic Liquid Encapsulated Czochralski Grown Inp Single Crystals
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 524 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 65
- Print publication:
- 1998
-
- Article
- Export citation
Studies of Interface Demarcation and Structural Defects in Ga Doped Ge Single Crystals Using Synchrotron White Beam X-Ray Topography
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 437 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 107
- Print publication:
- 1996
-
- Article
- Export citation
Characterization of Growth Defects in CdZnTe Single Crystals by Synchrotron White Beam X-ray Topography
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 41
- Print publication:
- 1995
-
- Article
- Export citation