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Performance and Reliability of SiC Power MOSFETs
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- 07 January 2016, pp. 81-89
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Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications
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- 26 January 2016, pp. 91-102
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Development of the Nitride Laser Diode Arrays for Video and Movie Projectors
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- 15 February 2016, pp. 103-108
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Thermal Properties of β-Ga2O3 from First Principles
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- 06 January 2016, pp. 109-114
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Room Temperature Fabrication of (ZnO)x(InN)1-x films with Step-Terrace Structure by RF Magnetron Sputtering
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- 06 January 2016, pp. 115-119
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Scintillation of Un-doped ZnO Single Crystals
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- 07 January 2016, pp. 121-126
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Metallic β-Nb2N Films Epitaxially Grown by MBE on Hexagonal SiC Substrates
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- 15 January 2016, pp. 127-132
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Influence of Al, In codoping in enhancing the Figure of Merit of ZnO thin films for TCO Applications
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- 19 January 2016, pp. 133-139
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Reactive sputtering of III-N materials for applications in electronic devices
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- 19 January 2016, pp. 141-146
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GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz
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- 07 March 2016, pp. 147-155
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Modified Linear Transmission Line Model Test Structure for Determining Specific Contact Resistance
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- 01 February 2016, pp. 157-162
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Effect of rapid thermal treatments on the physical properties of Cobalt Doped ZnO Films
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- 01 February 2016, pp. 163-168
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Incorporation of Mg into thick free-standing HVPE GaN
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- 04 February 2016, pp. 169-174
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Bandgap Energies of Cubic AlxGa1−xNyAs1−y Calculated by Means of the Dielectric Method
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- 05 February 2016, pp. 175-180
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Near-Junction Microfluidic Cooling for Wide Bandgap Devices
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- 09 February 2016, pp. 181-195
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Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness
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- 17 February 2016, pp. 197-202
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Front Cover (OFC, IFC) and matter
ADV volume 1 issue 2 Cover and Front matter
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- 17 March 2016, pp. f1-f4
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