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Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness

Published online by Cambridge University Press:  17 February 2016

X. C. Wei ,
L. Zhang ,
N. Zhang ,
J. X. Wang  and
J. M. Li
X. C. Wei*
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
L. Zhang
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
N. Zhang
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
J. X. Wang
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
J. M. Li
Affiliation:
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, People's Republic of China
*
*(Email: xcwei@semi.ac.cn)
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Abstract

Recombination dynamics of InGaN/GaN multiple quantum wells (MQWs) with different well thickness have been studied. From the behaviour of temperature dependent photoluminescence, we find that the activation energy decreases with the well thickness increasing. In addition, with temperature changing from 10K to room temperature, the “W” shape of full width of half maximum is also thickness related, and it becomes more obvious with the well thickness increasing. These results indicate that the dominant recombination dynamics change from exciton localization to quantum confined stark effect with well thickness increasing. From our measurement, the InGaN/GaN MQWs with 3nm thickness seems a turning point, which shows the best optimized optical and structural properties.

Keywords

defectsenergy generationIII-V
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 197 - 202
Copyright
Copyright © Materials Research Society 2016 

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References

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