7 results
Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e2
- Print publication:
- 1998
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InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 1185
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- 1997
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Valence Band Physics in Wurtzite GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 445
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- 1997
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Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 73
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- 1996
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Properties of GaN Epitaxial Layer Grown by MOVPE on MgAl2O4 Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 61
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- 1995
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Constant Temperature LEC Growth of Uniform Composition InGaAs Bulk Crystals through Continuous Supply of GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 197
- Print publication:
- 1992
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High-Quality InGaAsP Crystals Grown by MOVPE Using TBA and TBP
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- Journal:
- MRS Online Proceedings Library Archive / Volume 216 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 365
- Print publication:
- 1990
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