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High-Quality InGaAsP Crystals Grown by MOVPE Using TBA and TBP

Published online by Cambridge University Press:  25 February 2011

A. Kuramata ,
S. Yasmazaki  and
K. Nakajima
A. Kuramata
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
S. Yasmazaki
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
K. Nakajima
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Abstract

TBA and TBP are attractive candidates for group V sources for MOVPE growth from the viewpoint of safety. We studied how the composition of InGaAsP crystals depends on growth conditions, and investigated its electrical and optical properties. The relationship between group V sources and crystals indicates that TBA and TBP decompose into AsH and PH. Since there is no carbon in AsH and PH, carbon contamination in the crystals is expected to be small. Carrier concentrations ranged from 5×1014 cm−3 to 1.5×1015 cm−3. Photoluminescence spectra at 4.2K showed strong band-edge emission with no acceptor-related emission. Based on the electrical and optical properties of the crystals, we conclude that high-quality InGaAsP crystals can be grown using TBA and TBP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 365
Copyright
Copyright © Materials Research Society 1991

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References

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