Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-25T09:16:48.621Z Has data issue: false hasContentIssue false
  • English
  • Français

Constant Temperature LEC Growth of Uniform Composition InGaAs Bulk Crystals through Continuous Supply of GaAs

Published online by Cambridge University Press:  25 February 2011

K. Nakajima ,
T. Kusunoki  and
K. Kuramata
K. Nakajima
Affiliation:
Fujitsu Laboratories, Ltd., Morinosato-Wakamiya 10–1, Atsugi, Japan.
T. Kusunoki
Affiliation:
Fujitsu Laboratories, Ltd., Morinosato-Wakamiya 10–1, Atsugi, Japan.
K. Kuramata
Affiliation:
Fujitsu Laboratories, Ltd., Morinosato-Wakamiya 10–1, Atsugi, Japan.
Get access

Abstract

A 45 mm long In0.05 Ga0.95 As ternary bulk crystal with an extremely uniform composition has succeeded to be grown at a constant temperature by the liquid encapsulated Czochralski (LEC) method with a continuous supply of only GaAs to the pseudobinary InAs-GaAs growth melt. A double crucible which has both growth and source melt zones has been developed to improve the controllability of die supply of GaAs to the melt. These zones are separated by a cylindrical wall with a slit through which source elements are continuously supplied from die source melt zone to the growth melt zone. These results demonstrate mat large and uniform InGaAs bulk crystals can be grown using the constant temperature LEC method with a double crucible and with a continuous supply of only GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 197
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bonner, W.A., Skromme, B.J., Berry, E., Gilchrist, H.L., and Nahory, R.E., in Proc. 15th Intern. Symp. on GaAs and Related Compounds, Atlanta, Georgia, 1988, Inst. Phys. Conf. Ser. 96, ed. Harris, J.S. (Inst. Phys. Bristol, 1989) pp. 337–342.Google Scholar
[2] Nakajima, K., Kusunoki, T., and Takenaka, C., J. Cryst. Growth 113. 485 (1991).Google Scholar
[3] Kusunoki, T., Takenaka, C., and Nakajima, K., J. Cryst. Growth 115, 723 (1991).Google Scholar
[4] Nakajima, K. and Kusunoki, T., in Proc. 18th Intern. Symp. on GaAs and Related Compounds, Seatde, Washington, 1991, Inst. Phys. Conf. Ser. 120, ed. Stringfellow, G.B. (Inst Phys. Bristol, 1992) pp. 67–71.Google Scholar