Research Article
Polarization and band offsets of stacking faults in AlN and GaN
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- 13 June 2014, e21
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Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
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- 13 June 2014, e22
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High quality GaN films - growth and properties
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- 13 June 2014, e23
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Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
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- 13 June 2014, e24
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AMMONO method of BN, AlN and GaN synthesis and crystal growth.
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- 13 June 2014, e25
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Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
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- 13 June 2014, e26
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Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
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- 13 June 2014, e27
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Heterostructure for UV LEDs Based on Thick AlGaN Layers
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- 13 June 2014, e28
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Optical Properties of GaNAs Grown by MBE
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- 13 June 2014, e29
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Thermodynamic properties of group-III nitrides and related species
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- 13 June 2014, e30
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On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
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- 13 June 2014, e31
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Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
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- 13 June 2014, e32
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Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
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- 13 June 2014, e33
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Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
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- 13 June 2014, e34
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Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
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- 13 June 2014, e35
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Properties of GaN epilayers grown on misoriented sapphire substrates
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- 13 June 2014, e36
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Schottky Diodes on MOCVD Grown AlGaN Films.
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- 13 June 2014, e37
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GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary® Reactors
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- 13 June 2014, e38
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Pinholes, Dislocations and Strain Relaxation in InGaN
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- 13 June 2014, e39
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Localized Epitaxy of GaN by HVPE on patterned Substrates
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- 13 June 2014, e40
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