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Orientation-specific amorphization and intercalated recrystallization at ion-irradiated SrTiO3/MgO interfaces

Published online by Cambridge University Press:  27 August 2014

Jeffery A. Aguiar*
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Mujin Zhuo
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Zhenxing Bi
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Engang Fu
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Yongqiang Wang
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Pratik P. Dholabhai
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Amit Misra
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Quanxi Jia
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Blas P. Uberuaga
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
a)Address all correspondence to this author. e-mail:
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Oxide composites are a class of materials with potential uses for nuclear, space, and coating applications. Exploiting their promise, however, requires a detailed understanding of their interfacial structure and chemistry. Using analytical microscopy, we have examined the radiation damage behavior at the interface of a model oxide bilayer, SrTiO3/MgO. The as-synthesized SrTiO3 thin film contained both (100) and (110) oriented domains. We found that after ion beam implantation the (110) domains amorphized at a lower radiation fluence than the (100) domains. Further, a persistent crystalline layer of SrTiO3 forms at the interface even as the rest of the SrTiO3 film amorphizes. We hypothesize that the enhanced amorphization susceptibility of the (110) domains is a consequence of how charged irradiation-induced defects at the interfaces interact with the charged planes of the (110) domains. These results demonstrate the complex relationship between interfacial structure and radiation damage evolution at oxide interfaces.

Invited Feature Paper
Copyright © Materials Research Society 2014 

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