This paper gives an overview of the low-complexity radio frequency microelectromechanical systems (RF MEMS) switch concept and technology of EADS Innovation Works in Germany. Starting in 2003, a capacitive switch concept, which is unique in several aspects, was developed to address specific needs in the aeronautic and space. Thermally grown silicon oxide as dielectric layer, the silicon substrate as actuation electrode, and a conductive zone realized by ion implantation make the EADS RF MEMS switch a very simple, low-cost, and reliable approach. In this document, data on experimental investigations are presented, which demonstrate outstanding performance figures in terms of insertion loss, isolation, frequency range, bandwidth, RF-power handling, and robustness with respect to thermal load. Based on this concept, numerous different circuits in particular single-pole single-throws (SPSTs), single-pole multi-throws (SPMTs), tunable filters, phase shifters, and electronically steerable antennas between 6 and 100 GHz have been designed, fabricated, and characterized.

This paper reports on the potential of RF-MEMS technology based on aluminum nitride capacitive dielectric and nickel-suspended membranes to provide RF circuit functions in reconfigurable front-end radios. The RF performance of capacitive switches, distributed MEMS transmission lines (DMTLs) phase shifters for beam steering and tunable filters, including center frequency and bandwidth tuning of bandpass and band-stop filters are presented. Detailed characterization based on S-parameter data demonstrates very promising figures of merit of all fabricated demonstrators from 5 to 40 GHz.

This paper presents recent advances on reconfigurable reflectarrays at the University of Perugia. In particular, the activities carried out in the framework of the FP7 project ARASCOM (“MEMS and Liquid Crystal based” Agile Reflectarray Antennas for Security and COMmunication). As for ARASCOM outcomes, the purpose of the project is the design of a very large reconfigurable reflectarray controlled with micro-electro-mechanical systems (MEMS) for mm-wave imaging system at 76.5 GHz. A system with sufficient resolution to detect concealed weapons impose challenging requirements on the antenna, which shall be made of hundreds of thousands elements. The problem has been addressed by exploiting some innovative solutions and architectures that will be described in this document. In particular, the dimensioning of the reflectarray, the proposed 1-bit geometry of elementary cell, and the innovative biasing control architecture are reported together with the MEMS design and fabrication and the experimental results of a demonstrating board that validated the adopted procedure.

Millimeter-wave phase shifters are important components for a wide scope of applications. An analog-type phase shifter for W-band has been designed, analyzed, fabricated, and measured. The phase shifter consists of a reconfigurable high-impedance surface (HIS) controlled by micro-electromechanical system (MEMS) varactors and placed adjacent to a silicon dielectric rod waveguide. The analog-type phase shift in the range of 0–32° is observed at 75 GHz whereas applying bias voltage from 0 to 40 V to the MEMS varactors. The insertion loss of the MEMS tunable HIS is between 1.7 and 5 dB, depending on the frequency.

This paper presents the design and characterization of an active push/pull toggle RF micro-electro-mechanical systems (MEMS) switch for satellite redundancy networks. The actively controlled pull-up mechanism allows for extended restoring capabilities of the switch in case of ON-state stiction. As a proof of concept an active push/pull MEMS capacitive switch was modeled, designed, and manufactured in shunt configuration on a 50 Ω coplanar transmission line. RF measurement results show a return loss better than 15 dB in the 0.1–40 GHz range and an insertion loss better than 0.5 dB over the same range. The restoring capability of the switch was experimentally proved up to 9 h, and a predictive model was proposed for the estimation of the switch time to failure.

This paper presents an overview on novel microwave micro-electromechanical systems (MEMS) device concepts developed in our research group during the last 5 years, which are specifically designed for addressing some fundamental problems for reliable device operation and robustness to process parameter variation. In contrast to conventional solutions, the presented device concepts are targeted at eliminating their respective failure modes rather than reducing or controlling them. Novel concepts of MEMS phase shifters, tunable microwave surfaces, reconfigurable leaky-wave antennas, multi-stable switches, and tunable capacitors are presented, featuring the following innovative design elements: dielectric-less actuators to overcome dielectric charging; reversing active/passive functions in MEMS switch actuators to improve recovery from contact stiction; symmetrical anti-parallel metallization for full stress-control and temperature compensation of composite dielectric/metal layers for free-standing structures; monocrystalline silicon as structural material for superior mechanical performance; and eliminating thin metallic bridges for high–power handling. This paper summarizes the design, fabrication, and measurement of devices featuring these concepts, enhanced by new characterization data, and discusses them in the context of the conventional MEMS device design.

An empirical model has been proposed which provides an excellent fit to the drift of pull-in and release voltages of a MEMS capacitive switch due to bulk dielectric charging. This model correctly fits the linear time dependence over short time spans and transitions to a logarithmic dependence over longer time spans. Using this model to fit measured data enables a quick and efficient determination of the rate of dielectric charging, as well as providing a worst-case prediction of when the switch will fail due to dielectric charging. This model has been used to explore the impact of applied voltage, temperature, and duty factor on switch lifetime.

Among other reliability concerns, the dielectric charging is considered the major failure mechanism which hinders the commercialization of electrostatic capacitive radio frequency micro-electro-mechanical systems (RF MEMS) switches. In this study, Kelvin probe force microscopy (KPFM) surface potential measurements have been employed to study this phenomenon. Several novel KPFM-based characterization methods have been proposed to investigate the charging in bare dielectric films, metal–insulator–metal (MIM) capacitors, and MEMS switches, and the results from these methods have been correlated. The used dielectric material is plasma-enhanced chemical vapor deposition (PECVD) silicon nitride. The SiNx films have been charged by using a biased atomic force microscope (AFM) tip or by electrically stressing MIM capacitors and MEMS switches. The influence of several parameters on the dielectric charging has been studied: dielectric film thickness, deposition conditions, and under layers. Fourier transform infra-red (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) material characterization techniques have been used to determine the chemical bonds and compositions, respectively, of the SiNx films. The data from the physical material characterization have been correlated to the KPFM results. The study provides an accurate understanding of the charging/discharging processes in dielectric films implemented in electrostatic MEMS devices.

In this work, we analyze the pressure sensing of a thin film molybdenum/aluminumnitride/molybdenum (Mo/AlN/Mo) microwave/RF MEMS filter fabricated by a simple technology. After an experimental characterization in a frequency range between 1 and 36 GHz, we focused on the piezoelectric effect due to the stress properties of the piezoelectric AlN layer by applying forces by means of weights. Variations in the bandpass region of the microwave/RF filter are observed by proving high sensitivity also for low applied weights. We check by a properly designed three-dimensional (3D) finite-element method (FEM) tool the pressure-sensing property of the proposed device. Finally, we analyze the bad gap property of a chip with central defect around 40 GHz.