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Experimental pressure sensing and technology of piezoelectric microwave/RF MEMS filters

Published online by Cambridge University Press:  20 June 2011

Alessandro Massaro ,
Giuseppe Venanzoni ,
Marco Farina ,
Antonio Morini ,
Tullio Rozzi ,
Roberto Cingolani ,
Adriana Passaseo  and
Massimo De Vittorio
Alessandro Massaro*
Affiliation:
Center of Bio-Molecular Nanotechnology, IIT Italian Institute of Technology, Arnesano 73100, Italy.
Giuseppe Venanzoni
Affiliation:
Dipartimento of Ingegneria Biomedica Elettronica e Telecomunicazioni DIBET of Ancona, Università Politecnica delle Marche, Italy.
Marco Farina
Affiliation:
Dipartimento of Ingegneria Biomedica Elettronica e Telecomunicazioni DIBET of Ancona, Università Politecnica delle Marche, Italy.
Antonio Morini
Affiliation:
Dipartimento of Ingegneria Biomedica Elettronica e Telecomunicazioni DIBET of Ancona, Università Politecnica delle Marche, Italy.
Tullio Rozzi
Affiliation:
Dipartimento of Ingegneria Biomedica Elettronica e Telecomunicazioni DIBET of Ancona, Università Politecnica delle Marche, Italy.
Roberto Cingolani
Affiliation:
Center of Bio-Molecular Nanotechnology, IIT Italian Institute of Technology, Arnesano 73100, Italy.
Adriana Passaseo
Affiliation:
National Nanotechnology Laboratory, Institute of Nanoscience of CNR of Lecce, Italy.
Massimo De Vittorio
Affiliation:
Center of Bio-Molecular Nanotechnology, IIT Italian Institute of Technology, Arnesano 73100, Italy.
*
Corresponding author: A. Massaro Email: alessandro.massaro@iit.it
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Abstract

In this work, we analyze the pressure sensing of a thin film molybdenum/aluminumnitride/molybdenum (Mo/AlN/Mo) microwave/RF MEMS filter fabricated by a simple technology. After an experimental characterization in a frequency range between 1 and 36 GHz, we focused on the piezoelectric effect due to the stress properties of the piezoelectric AlN layer by applying forces by means of weights. Variations in the bandpass region of the microwave/RF filter are observed by proving high sensitivity also for low applied weights. We check by a properly designed three-dimensional (3D) finite-element method (FEM) tool the pressure-sensing property of the proposed device. Finally, we analyze the bad gap property of a chip with central defect around 40 GHz.

Keywords

Microwave/RF filterPressure sensingPiezoelectric materials
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Special Issue 5: RF MEMS , October 2011 , pp. 587 - 593
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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