We investigated high-resistivity cadmium zinc telluride (CdZnTe):In single crystals annealed in hydrogen to reveal the passivation effect of defects. An overall reduction in the concentration of defect levels induced by annealing was obviously observed by thermally stimulated current measurements. There is a large decrease by 56.51% in the concentration of secondly ionized Cd vacancies (T3) after hydrogenation. The concentration of firstly ionized Cd vacancies (T2) was a little bit lower (17.99%) in the hydrogenated CZT crystals. The formation of neutral InH complex and lower occupation of VCd by In dopant would result in a significant decrease (68.31%) in the trap density of ${\rm In}_{\rm Cd}^ +$ related shallow donor (T1) after hydrogenation. The bulk resistivity was calculated from I–V characteristic curves to be ~1.97 × 1010 Ωcm before annealing and ~1.78 × 1010 Ωcm after annealing. Hall measurements also reveal n-type conduction for the hydrogenated crystals. Electron mobility was fitted to be about 110 cm2/Vs before annealing and 488 cm2/Vs after annealing, demonstrating better carrier transport properties. Electron mobility-lifetime product could be fitted to be about 3.60 × 10−4 cm2/V before annealing and 5.45 × 10−4 cm2/V after annealing, demonstrating better detector performances.

We have investigated the chemical and electrical properties of a thin SiO2/TiO2 stacking layer deposited on n-Si and heavily phosphorus-doped n++ Si substrates to elucidate effects of phosphorus doping of Si absorbers on the band alignment and electrical performance of a SiO2/TiO2 stack-based electron-selective contact deposited on the differently doped Si substrates. From our XPS study, we show a shift of the TiO2 energy levels up to ∼0.13 eV with respect to those of Si as the doping level of Si substrates changes. We also show that the conduction band offset of the SiO2/TiO2 stacking layer at the interface with the n++ Si substrate seems to smaller than that of the SiO2/TiO2 stacking layer at the interface with n-Si substrate. Finally, from our electrical transport measurements, we could conclude that the thinner tunneling barrier, the increased electron density in front of the SiO2 layer in the n++ Si surface, and/or the reduced barrier height by heavy doping, seem to enhance the majority electron transport property of the SiO2/TiO2/n++ Si samples compared to that of the SiO2/TiO2/n-Si samples.

The effect of Cu addition varied from 0 to 4 mass% on the corrosion resistance and electrochemical response in Ni–Co–Cr–Mo alloys was investigated using potentiodynamic polarization, electrochemical impedance spectroscopy, and Mott–Schottky analysis. Results indicate that the Ni–Co–Cr–Mo alloy with 2 mass% Cu exhibited the most superior corrosion resistance, and the presence of Cu greatly influenced the outer porous layer. The Ni–Co–Cr–Mo alloys’ corrosion resistance was not simply increasing with copper addition increasing from 0 to 4 mass%. The X-ray photoelectron spectroscopy etching analysis was also conducted to illustrate the fraction of Cu at various depths in the passive film, and the results reveal that a maximum limit on Cu content (appropriately 3.10 mass%) existed in the outermost surface in the present condition. Among the studied alloys, the Ni–Co–Cr–Mo–2%Cu alloy formed the thickest passive film with the lowest donor density.

Historically, batteries with lithium metal anodes have been a hazard, as the lithium becomes rough and eventually finely divided during cycling. The promise of higher energy density, however, continues to drive the search for novel approaches to manage this light and reactive material. Significant improvement has been achieved by designing new liquid-electrolyte compositions and interface barriers to stabilize the lithium in traditional batteries, but it is clear that solid-state batteries ensure a higher level of safety and perhaps higher energy density and lifetimes. The materials challenge then is to fabricate a cost-effective solid electrolyte that effectively maintains lithium as a dense uniform metal layer. This article describes the ideal cycling behavior of lithium and progress toward this goal of a solid electrolyte using glassy, ceramic, polymer, and composite electrolytes, as well as the challenges that continue to arise toward long-term, high-rate, and efficient cycling of lithium metal.

The Supercontainer (SC) is the reference concept for the post-conditioning of vitrified high-level nuclear waste and spent fuel in Belgium. It comprises a prefabricated concrete buffer that completely surrounds a carbon steel overpack. Welding is being considered as a final closure technique of the carbon steel overpack in order to ensure its water tightness. Welding is known to induce residual stresses near the weld zone, which may lead to an increased susceptibility to stress corrosion cracking (SCC). In this study, slow strain rate tests were conducted to study the SCC behavior of plain and welded P355 QL2 grade carbon steel exposed to an artificial concrete pore water solution that is representative of the SC concrete buffer environment. The tests were performed at 140°C, a constant strain rate of 5 × 10-7 s-1 and at open circuit potential under anoxic conditions. The effect of thiosulfate on the SCC behavior was investigated up to levels of 600 mg/L S2O32-.

The present study addressed the weldability of Hastelloy C-276 and Type 321 austenitic stainless steel (ASS) dissimilar combination used for manufacturing of high-temperature equipments in nuclear power plants. Investigation of the microstructural evolutions across the different welding passes and their subsequent effect on the mechanical properties and corrosion resistance would be helpful in better understanding and pave way for the frequent application of such dissimilar joints in the industrial applications. The problem of segregation associated with the multi-pass gas tungsten arc welding process was also investigated systematically. The fusion zone microstructures exhibited a transition from columnar to an equiaxed dendritic structure with varying passes. The topologically closed packed (TCP) phases (such as P and μ) were observed in the fusion zone as well as at the weld interface of Hastelloy C-276. Polarization test was performed to evaluate the corrosion resistance and results indicated that the Cr and Mo depleted zones formed around the TCP phases might be responsible for decreased Epit value for fusion zone. The novelty of this work is to explore the possibilities of substitution of an expensive Hastelloy C-276 with a cost-effective Ti-stabilized Type 321 ASS.

This study examined the effects of a variety of metallurgical factors on the electrochemical corrosion behavior of superaustenitic stainless steel welds. First, the effects of the sigma (σ)-phase on the corrosion behavior were studied by means of a three-dimensional-atom probe. Cr and Mo depletion areas formed around the σ-phases which are precipitated in the interdendritic area were clearly observed. Second, the effects of oxide inclusion on the pitting corrosion of the steel welds were analyzed. The utilization of high resolution transmission electron microscope clearly demonstrated that the thickness and Cr content of the passive film formed on the steel surface decreased significantly with decreasing distance to the oxide inclusion, resulting in a deterioration of the corrosion resistance. Third, the effects of alloying elements, Cu and Al, were evaluated using an electrochemical polarization technique. This confirmed that Cu has a detrimental effect on the resistance to localized corrosion of the steel. The addition of Al up to 0.25 wt% had no significant effects on corrosion resistance in a chloride environment despite the presence of an Al-based oxide layer (Al2O3) on the outermost surface.

Interaction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passivation involved the use of sulfide and fluoride ions individually. However, the two kinds of double-step passivations were performed by treating the n-GaAs surface. In the first approach GaAs surface was firstly treated with sulfide ions and secondly with fluoride ions, respectively. In the second double step approach GaAs surface was first treated with fluoride ions followed by sulfide ions, respectively. Sulfidation was conducted using the nonaqueous solution of sodium sulfide salt. Whereas the passivation steps with fluoride ion was performed with the aqueous solution of ammonium fluoride. Both sulfidation and fluoridation steps were performed either by dipping the GaAs sample in the desired ionic solution or electrochemically. Photoluminescence was conducted to characterize the relative changes in surface recombination velocity due to the single and double step surface passivation. Photoluminescence study showed that the double-step chemical treatment where GaAs was first treated with fluoride ions followed by the sulfide ions yielded the highest improvement. The time vs. photoluminescence study showed that this double-step passivation exhibited lower degradation rate as compared to widely discussed sulfide ion passivated GaAs surface. We also conducted surface elemental analysis using Rutherford Back Scattering to decipher the near surface chemical changes due to the four passivation methodologies we adopted. The double-step passivations affected the shallower region near GaAs surface as compared to the single step passivations.

The corrosion of unirradiated and unsensitized Advanced Gas-cooled Reactor cladding material, 20/25/Nb stainless steel, was studied as a function of temperature and [Cl-] typical of those found in interim spent fuel storage pond waters. With respect to preventing corrosion, it found to be advantageous to dose the ponds to pH≈11.4. At pH lower than 7, the initiation of pitting is observed at ∼0.4V vs Ag/AgCl, an undesirable condition as pits are considered to be initiators of stress corrosion cracking (SCC) which may contribute to loss of cladding integrity during storage. Such pits are not seen at a pH 11.4 for the expected and projected pond operating temperatures of 24-60°C. There generally appears to be no localised corrosion threat to cladding as the temperature is increased in this range, although substantial pit formation is observed at the extreme maloperation temperature of 90°C at pH 11.4 indicating a loss of protection.

Transition metal oxides (TMOs) have recently demonstrated to be a good alternative to boron/phosphorous doped layers in crystalline silicon heterojunction solar cells. In this work, the interface between n-type c-Si (n-Si) and three thermally evaporated TMOs (MoO3, WO3, and V2O5) was investigated by transmission electron microscopy, secondary ion-mass, and x-ray photoelectron spectroscopy. For the oxides studied, surface passivation of n-Si was attributed to an ultra-thin (1.9–2.8 nm) SiOx∼1.5 interlayer formed by chemical reaction, leaving oxygen-deficient species (MoO, WO2, and VO2) as by-products. Carrier selectivity was also inferred from the inversion layer induced on the n-Si surface, a result of Fermi level alignment between two materials with dissimilar electrochemical potentials (work function difference Δϕ ≥ 1 eV). Therefore, the hole-selective and passivating functionality of these TMOs, in addition to their ambient temperature processing, could prove an effective means to lower the cost and simplify solar cell processing.

We apply n- and p-type polycrystalline silicon (poly-Si) films on tunneling SiOx to form passivated contacts to n-type Si wafers. The resulting induced emitter and n+/n back surface field junctions of high carrier selectivity and low contact resistivity enable high efficiency Si solar cells. This work addresses the materials science of their performance governed by the properties of the individual layers (poly-Si, tunneling oxide) and more importantly, by the process history of the cell as a whole. Tunneling SiOx layers (<2 nm) are grown thermally or chemically, followed by a plasma enhanced chemical vapor deposition growth of p+ or n+ doped a-Si:H. The latter is thermally crystallized into poly-Si, resulting in grain nucleation and growth as well as dopant diffusion within the poly-Si and penetration through the tunneling oxide into the Si base wafer. The cell process is designed to improve the passivation of both oxide interfaces and tunneling transport through the oxide. A novel passivation technique involves coating of the passivated contact and whole cell with atomic layer deposited Al2O3 and activating them at 400 °C. The resulting excellent passivation persists after subsequent chemical removal of the Al2O3. The preceding cell process steps must be carefully tailored to avoid structural and morphological defects, as well as to maintain or improve passivation, and carrier selective transport. Furthermore, passivated contact metallization presents significant challenges, often resulting in passivation loss. Suggested remedies include improved Si cell wafer surface morphology (without micropyramids) and postdeposited a-Si:H capping layers over the poly-Si.

Fabrication of graphene nanostructures it is important for both investigating their intrinsic physical properties and applying them into various functional devices. In this work we present a study on atomic layer deposition (ALD) of Al2O3 to produce patterned graphene through area-selective chemical vapor deposition (CVD) growth. A systematic parametric study was conducted to determine how the number of cycles and the purging time affect the morphology and the electrical properties of both graphene and Al2O3 layers.

Three II-VI wide bandgap compound semiconductors have been investigated for surface passivation of various photovoltaic devices. First part of this work focuses on the surface passivation of HgCdTe IR detectors using CdTe. A new metalorganic chemical vapor deposition (MOCVD) process has been developed that involves depositing CdTe films at much lower temperature (< 175°C) than the conventional processes used till now. Deposition rate as high as 420nm/h was obtained using this novel experimental setup. Favorable conformal coverage on high aspect ratio HgCdTe devices along with a significant minority carrier lifetime improvement was obtained. Another II-VI semiconductor, namely, CdS was investigated as a surface passivant for HgCdTe IR detectors. It was deposited by MOCVD as well as atomic layer deposition (ALD) and was studied for optimal conformal coverage on high aspect ratio structures. Surface passivation of p-type Si wafer has also been demonstrated using p-ZnTe grown by MOCVD, for possible application in solar cells. Preliminary work showed a remarkable improvement in the minority carrier lifetime of Si light absorbing layer after passivation with a thin layer of ZnTe.

Ge-Si alloy nanoparticles (NPs) covering the full range of compositions were studied in regard to their suitability as semiconducting channel layer in thin-film transistors (TFTs). Special focus is given to the influence of annealing and encapsulation techniques on the contact and channel properties. Therefore, electrical characterization methods separating contact from channel characteristics are highlighted and applied. It is demonstrated that appropriate passivation of the nanoparticle surfaces can improve the Ion/Ioff ratios by modulation of the density of free charge carriers and also can suppress hysteresis effects. Ge-rich NP alloys can generally be passivated more effectively regardless if passivation is done with solution-processed poly(methyl methacrylate) (PMMA) or by aluminum oxide (Al2O3) from Atomic Layer Deposition (ALD). Sufficient annealing improves the contact formation between aluminum electrodes and Ge-Si particles by modification of charge injection. The presented analysis leads to a better understanding interface and surface effects in porous nanoparticle semiconductors for application in TFT devices.

Frictional behaviour of multilayered graphene was studied in air with different relative humidity (RH) levels (10–52% RH). Pin-on-disk type sliding tests were performed and the running-in and steady state coefficient of friction (COF) values were measured against M2 tool steel counterface. On increasing the RH, multilayered graphene showed a reduction in steady state COF from 0.11 at 10% RH to 0.08 at 52% RH. The low steady state COF values observed in graphene could be attributed to the transfer layer formed on the M2 tool steel counterface. A sliding-induced structural change was observed in graphene transfer layers which could have facilitated the graphitic transfer layer formation. The multilayered graphene showed a lower steady state COF values at all RH compared to non-hydrogenated diamond-like carbon (NH-DLC) which recorded a steady state COF of 0.47 at 10% RH and 0.25 at 52% RH.

This review focuses on in situ functionalization of gallium nitride (GaN) with different adsorbates in the presence of an etchant. The low-temperature aqueous nature of this process provides a safe, environmentally friendly technique for tailoring the semiconductor's properties for various applications. Surface binding to GaN relies on a native oxide layer or direct attachment to the metal center present on the etched surface. The specifics of the binding mechanism are based on the functional groups present on the adsorbate. The effects of the GaN surface polarity and quality on the modification approach are analyzed. The review summarizes the alteration of GaN properties after the in situ treatment. Quantitative data until now have shown changes in morphological, surface chemical, optical, electronic, and aqueous stability properties. The review concludes with a short outlook on future studies associated with this surface modification approach.

The principles of Stress Corrosion Cracking (SCC) are supported in the behavior of the oxide film formed into a crack; in fact the active dissolution of metal atoms after a film rupture and until fill repassivation is the base of slip dissolution model which is a good model to justified the crack tip advance in stainless steels (SS) used in vessel internal components for the nuclear industry. This paper shows the analyzed made at the oxide film formed on samples of 304L SS sensitized and non sensitized, under autoclave conditions (288°C, 8MPa) with and without crevice geometric formation, using SEM, XRD and Raman Spectra.

The crevice and no crevice condition allow establish the difference of an oxide formed on a free surface (no crevice) and the oxide formed on the wall in a crack (crevice); the chemical and physical properties of oxide film can alter the mechanism and kinetics of SCC process, so the difference between these two conditions will give more information about the behavior of the oxide film.

We report effective passivation of silicon surfaces by heating single crystalline silicon substrates in liquid water at 110°C for 1 h. High values of photo-induced effective minority carrier lifetime τeff in the range from 1.9x10-4 to 1.8x10-3 s were obtained for the n-type samples with resistivity in the range from 1.7 to 18.1 Ωcm. τeff ranged from 8.3x10-4 to 3.1x10-3 s and from 1.2x10-4 to 6.0x10-4 s over the area of 4 inch sized 17.0 Ωcm n- and 15.0 Ωcm p-type samples, respectively. The heat treatment in liquid water at 110°C for 1 h resulted in low surface recombination velocities ranging from 7 to 34 cm/s and from 49 to 250 cm/s for those 4 inch sized n- and p-type samples, respectively. The thickness of the passivation layer was estimated to be approximate only 0.7 nm. Metal-insulator-semiconductor type solar cell was demonstrated with Al and Au metal formation on the passivated surface. Rectified current voltage and solar cell characteristics were observed. Open circuit voltage of 0.47 V was obtained under AM 1.5 light illumination at 100 mW/cm2.

The influence of annealing ambient conditions and deposited passivation materials on indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) performance is investigated. Results from annealing experiments confirm that a nominal exposure to oxidizing ambient conditions is required, which is a function of temperature, time and gas environment. Nitrogen anneal with a controlled air ramp-down provided the best performance devices with a mobility (µsat) of 11-13 cm2/V·s and subthreshold slope (SS) of 135-200 mV/dec, with some hysteresis. Plasma-deposited passivation materials including sputtered quartz and PECVD SiO2 demonstrated a significant increase in material conductivity, which was not significantly reversible by an oxidizing ambient anneal. E-beam evaporated Al2O3 passivated devices that were annealed in air at 400 °C demonstrated improved stability over time and suppressed hysteresis in comparison to unpassivated devices. Devices which were passivated with B-staged bisbenzocyclobutene-based (BCB) resins and annealed in air at 250 °C also exhibited suppressed hysteresis.

In this paper, the effect of phosphorus diffusion and hydrogen passivation on the material properties of laser crystallised silicon on glass is investigated. Photoluminescence imaging, as well as Hall effect and Suns-Voc techniques are applied for the characterisation of laser crystallized silicon thin-film material properties. Hall effect as well as Suns-Voc measurements supports the photoluminescence imaging results; phosphorus diffusion and hydrogen passivation of laser crystallized films improves the overall material quality. Hydrogen passivation is more effective at improving the electronic properties of the laser crystallized films than phosphorus diffusion. Hydrogen passivated samples improved the photoluminescence intensity even further by a factor of 3. In addition, a correlation between photoluminescence intensity and open-circuit voltage is demonstrated: samples with highest photoluminescence intensity (1678 counts/s), gave the highest voltage (530 mV). Hall effect measurement shows a significant improvement in the bulk material, with carrier mobility increasing from 208 cm2/Vs to 488 cm2/Vs.