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The junction depth should be less than 0.05 microns to fabricate sub 0.1 micron devices. This requires implanting boron with energy of less than 1 keV. One drawback in a low energy ion source is low throughput due to low ion beam current. At present, boron known for a major p-type dopant for PMOSFET has problem to easily diffuse into Si wafer even in rapid thermal processing by high diffusivity. To resolve this problem, decaborane (B10H14) molecules are implanted to make p+/n junction on n-type Si wafers for low-energy boron dopant source. Ionized decaborane is accelerated at 1∼10 kV and implanted up to dosages from 1×1012/cm2 to 5×1013/cm2. Afterwards, Decaborane implanted Si wafers were post-annealed for 10 sec at 800, 900 and 1000°C, respectively. From RBS results on as-implanted n-type Si wafer implanted at 5 kV, it is observed there are amorphous Si layers with 4 nm in depth and boron ions are implanted up to 1∼5 nm in depth from SIMS analysis. The electrical properties of these p-n junctions are 127∼130 ω/sq. as sheet resistance, +0.3 V turn-on voltage and −1.1 V breakdown voltage obtained from I-V measurement.
The optical absorption spectra of AgInS2:Co2+ single crystals grown by chemical transport reaction using iodine as a transporting medium have been studied at 6 K. The peaks can be explained by the transitions of Co2+ in the Td symmetry with the spin-orbit coupling, which means that the deviations of the atomic sites from those of the ideal wurtzite structure can be considered negligibly small. The consideration of both the crystal field parameters and the electronegativity difference between atoms may indicate that Co atoms substitute In atoms.
We investigated the photoluminescence as well as the crystal structure and optical energy gaps of the Zn1-xCdxAl2Se4-4xS4x solid solution system based on the Al-related compounds of ZnAl2Se4, ZnAl2S4, CdAl2Se4, and CdAl2S4. The single crystals of the system with 0.0 ≤ x ≤ 1.0 were grown by the chemical transport reaction technique. The Zn1-xCdxAl2Se4-4xS4x crystallizes in a defect chalcopyrite structure for a whole composition and has an optical energy gap ranging from 3.525 to 3.577 eV at 13 K. The photoluminescence spectra at 13 K showed a strong emission band in the blue spectral region and a weak broad emission band in the visible region due to donor–acceptor pair recombination. The composition and temperature dependence of these bands were examined in the investigated regions. The simple energy band scheme for the radiative mechanisms of the Zn1-xCdxAl2Se4-4xS4x is proposed on the basis of our experimental results along with photo-induced current transient spectroscopy measurements.
MgxZn1-xSi: Ho3+, MgxZn1-xSe: Er3+, and MgxZn1-xSe: Tm3+ single crystals were grown by the closed-tube sublimation method. The single crystals crystallized into a zincblende structure at the composition x = 0.11 and a wurtzite structure at the composition x = 0.25, 0.32, and 0.41. The trivalent ions (Ho3+, Er3+, and Tm3+) of the rare-earth elements Ho, Er, and Tm site in Td and C3v symmetries in the single crystals with zincblende and wurtzite structures, respectively. Sharp emission peaks appeared in the photoluminescence spectra of the single crystals. These emission peaks are identified to originate from the radiation recombination between the energy levels of the trivalent ions sited in Td and C3v symmetries.
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