51 results
Device processing and junction formation needs for ultra-high power Ga2O3 electronics
-
- Journal:
- MRS Communications / Volume 9 / Issue 1 / March 2019
- Published online by Cambridge University Press:
- 29 January 2019, pp. 77-87
- Print publication:
- March 2019
-
- Article
- Export citation
High Sensitivity of Hydrogen Sensing Through N-polar GaN Schottky Diodes
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1202 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1202-I06-06
- Print publication:
- 2009
-
- Article
- Export citation
Recent Advances in Wide Bandgap Semiconductor Biological and Gas Sensors
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1202 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1202-I06-01
- Print publication:
- 2009
-
- Article
- Export citation
High Temperature Stable Contacts for GaN HEMTs and LEDs
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1108 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1108-A01-04
- Print publication:
- 2008
-
- Article
- Export citation
Ir/Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1000 / 2007
- Published online by Cambridge University Press:
- 15 March 2011, 1000-L06-17
- Print publication:
- 2007
-
- Article
- Export citation
The Oxide/Nitride Interface: a study for gate dielectrics and field passivation
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 786 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E8.5
- Print publication:
- 2003
-
- Article
- Export citation
AlGaN/GaN Structures Grown by HVPE: Growth and Characterization
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 764 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C2.2
- Print publication:
- 2003
-
- Article
- Export citation
Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.16.1
- Print publication:
- 2001
-
- Article
- Export citation
Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.17.1
- Print publication:
- 2001
-
- Article
- Export citation
Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I6.8.1
- Print publication:
- 2001
-
- Article
- Export citation
Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.47.1
- Print publication:
- 2001
-
- Article
- Export citation
Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.30.1
- Print publication:
- 2001
-
- Article
- Export citation
Ferromagnetic and Structural Properties of Mn-Implanted p-GaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 674 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, T6.8
- Print publication:
- 2001
-
- Article
- Export citation
Processing And Device Performance Of GaN Power Rectifiers
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 838-844
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
Dry Etching of MRAM Structures
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 614 / 2000
- Published online by Cambridge University Press:
- 14 March 2011, F10.2.1
- Print publication:
- 2000
-
- Article
- Export citation
Surface Conversion Effects in Plasma-Damaged p-GaN
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 558-569
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
A Review of Dry Etching of GaN and Related Materials
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e11
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
Surface Disordering and Nitrogen Loss in GaN under Ion Bombardment
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T7.9.1
- Print publication:
- 2000
-
- Article
- Export citation
GaN pnp Bipolar Junction Transistors Operated to 250°C
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.2.1
- Print publication:
- 2000
-
- Article
- Export citation
Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e5
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation