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Ferromagnetic and Structural Properties of Mn-Implanted p-GaN

  • N. Theodoropoulou (a1), A.F. Hebard (a1), M.E. Overberg (a2), C.R. Abernathy (a2), S.J. Pearton (a2), S.N.G. Chu (a3) and R.G. Wilson (a4)...

Abstract

High doses (1015 – 5×x1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350oC and annealed at 700-1000°C. At the high end of this dose range, platelet structures of GaxMn1−xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250K. At low doses, the implantation led to a buried band of defects at the end of the ion range.

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Ferromagnetic and Structural Properties of Mn-Implanted p-GaN

  • N. Theodoropoulou (a1), A.F. Hebard (a1), M.E. Overberg (a2), C.R. Abernathy (a2), S.J. Pearton (a2), S.N.G. Chu (a3) and R.G. Wilson (a4)...

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