Skip to main content Accessibility help
×
Home

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes

  • B. Luo (a1), J. Kim (a1), R. Mehandru (a1), F. Ren (a1), K. P. Lee (a2), S.J. Pearton (a2), A.Y. Polyakov (a3), N.B. Smirnov (a3), A.V. Govorkov (a3), E.A. Kozhukhova (a3), A.V. Osinsky (a4) and P.E. Norris (a4)...

Abstract

Properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions prepared by HVPE on 4H SiC substrates were studied by means of C-V, C/G-T, C-f, I-V and DLTS. It is shown, in agrrement with earlier publications, that the GaN/p-SiC HJ is staggered type II with ΔEc=-0.4 eV andΔEv=0.6 eV. Whenchanging GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2 eV andΔEv=0.6 eV. I-V characteristics of both heterojunctions bear evidence of strong tunneling via defect states, particularly centers with activation energy of 1.25 eV for GaN/4H SiC HJ. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these HJs showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC. DLTS measurements on both types of HJs revealed the presence of broad bands whose behavior is indicative of these bands being related to continuous states in the gap, most likely near the nitride/carbide interface.

Copyright

References

Hide All
1. Pankove, J.I., Chang, S.S., Lee, H.C., Molnar, R., Moustakas, T.D. and Zeghbroek, B. Van, IEDM Tech Digest, 947, 389 (1994)
2. Danielson, E., Zetterling, C-M., Ostling, M., Nikolaev, A., Nikitina, I.P. and Dmitriev, V.A., IEEE Transactions on Electron Devices, 48, 444 (2001)
3. Torvik, J.T., Leksono, M., Pankove, J., Zeghbroek, B. Van, Ng, H.M. and Moustakas, T.D., Appl. Phys. Lett., 72, 1371(1998)
4. Torvik, J.T., Qiu, Chang-hua, Leksono, M. and Pankove, J.I., Appl. Phys. Lett. 72, 945 (1998)
5. Sinharoy, S., Agarwal, A.K., Augustine, G., Rowland, L.B., Messham, R.L., Driver, M.C. and Hopkins, R.H. (Mat. Res. Soc. Symp. Proc. 395, Warrendale, PA, 1996) pp. 157162
6. Pearton, S.J., Zolper, J.C., Shul, R.J. and Ren, F., J.Appl.Phys. 86, 1 (1999).
7. Stocker, D.E., Schubert, E.F., Redwing, J.M., Appl. Phys. Lett., 73, 2564 (1998)
8. Lang, D.V., J. Appl. Phys, 45, 3023 (1974)
9. Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Shin, M., Skowronski, M. and Greve, D.W., J. Appl. Phys., 84, 870 (1998)
10. Polyakov, A.Y., Smirnov, N.B., Usikov, A.S., Govorkov, A.V. and Pushnyi, B.V., Solid-State Electron. 42, 1959 (1998).
11. Berman, L.S. and Lebedev, A.A., Capacitance Spectroscopy of Deep Centers in Semiconductors (Leningrad, Nauka, 1981) (in Russian)
12. Goldberg, Yu., Levinstein, M. and Rumyantsev, S., Silicon Carbide, in Properties of Advanced Semiconductor Materials, GaN, AlN, InN, BN, SiC, SiGe, ed. Levnstein, M.E., Rumyantsev, S.L., Shur, M.S. (John Wiley&Sons Inc., New York, 2001) pp. 93148
13. Kim, D.J., Ryu, D.Y., Bojarczuk, N.A., Karasinski, J., Guha, S., Lee, S.H. and Lee, J.H., J. Appl. Phys. 88, 2564 (2000)

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes

  • B. Luo (a1), J. Kim (a1), R. Mehandru (a1), F. Ren (a1), K. P. Lee (a2), S.J. Pearton (a2), A.Y. Polyakov (a3), N.B. Smirnov (a3), A.V. Govorkov (a3), E.A. Kozhukhova (a3), A.V. Osinsky (a4) and P.E. Norris (a4)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed