18 results
Optimization of Ion Implantation processes for 4H-SiC DIMOSFET
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- Journal:
- MRS Advances / Volume 1 / Issue 55 / 2016
- Published online by Cambridge University Press:
- 18 May 2016, pp. 3673-3678
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- 2016
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Silicon Nanowires Obtained by Low Temperature Plasma-Based Chemical Vapor Deposition.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1408 / 2012
- Published online by Cambridge University Press:
- 18 May 2012, mrsf11-1408-bb20-11
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- 2012
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Indium in silicon: interactions with native defects and with C impurities
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C6.3
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- 2004
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Role of C and Ge in the electrical activation of In implanted in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C8.7
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- 2004
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Amorphous-to-polycrystal transition in GeSbTe thin films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 803 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, HH1.4
- Print publication:
- 2003
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Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 765 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, D7.1
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- 2003
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Indium in silicon: a study on diffusion and electrical activation.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 765 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, D6.13
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- 2003
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Effects of a Ta Interlayer on the Titanium Silicide Reaction: C40 Formation and Higher Scalability of the TiSi2 Process.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K6.3
- Print publication:
- 2001
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Memory effects in MOS capacitors with silicon rich oxide insulators
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- Journal:
- MRS Online Proceedings Library Archive / Volume 609 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, A29.1
- Print publication:
- 2000
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The Source of Transient Enhanced Diffusion in Sub-keV Implanted Boron in Crystalline Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B5.2
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- 2000
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Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 568 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 43
- Print publication:
- 1999
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Kinetics of the C49-C54 transformation in patterned and blanket TiSi2 films: a comparison.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 514 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 219
- Print publication:
- 1998
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Point-Defect Migration in Crystalline Si: Impurity Content, Surface and Stress Effects
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- Journal:
- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 93
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- 1998
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Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content
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- Journal:
- MRS Online Proceedings Library Archive / Volume 469 / 1997
- Published online by Cambridge University Press:
- 15 February 2011, 163
- Print publication:
- 1997
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Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena
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- Journal:
- MRS Online Proceedings Library Archive / Volume 439 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 71
- Print publication:
- 1996
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The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV Implanted Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 438 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 65
- Print publication:
- 1996
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Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena
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- Journal:
- MRS Online Proceedings Library Archive / Volume 438 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 53
- Print publication:
- 1996
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The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV Implanted Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 439 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 83
- Print publication:
- 1996
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