In this paper a photodetector working as an active optical filter device is used to detect modulated visible optical signals for applications based on Visible Light Communication (VLC). The proposed application demonstrates the viability of indoor positioning using VLC technology established by the modulation of indoor ultra-bright RGB white LEDs. The signals of the internal red and blue chips of the white LEDs were modulated at specific frequencies and the generated photocurrent was measured by a pin-pin photodetector based on a-SiC:H/a-Si:H. This device operates as a visible optical filter with controlled wavelength sensitivity through the use of adequate optical biasing light. Thus it is able to detect different wavelengths which allow the detection of the individual components of the tri-chromatic white LED. This possibility is the basis for the indoor location algorithm. We demonstrate the possibility of decoding four transmission optical channels supplied by two different wavelengths of white LEDs modulated under different bit sequences. The identification of the signals received by the photodetector allows the location identification of the photodetector position and supplies indoor navigation.

This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene.

In this paper the defects generated by ion implantation in 4H-SiC DIMOSFET (Double Implanted MOSFETs), and their evolution after annealing process, have been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence (µPL) and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. The role of the annealing process has been carefully investigated by using different temperatures. It appears fundamental for the restoring of the crystal damage. The effect of the ion implantation dose has been investigated as well. By reducing the source ion implanted dose a large decrease of point defects has been detected and a considerable improvement of the electrical characteristic of the DIMOSFET has been observed.

The intracortical neural interface (INI) is a key component of brain machine interfaces (BMI) which offer the possibility to restore functions lost by patients due to severe trauma to the central or peripheral nervous system. Unfortunately today’s neural electrodes suffer from a variety of design flaws, mainly the use of non-biocompatible materials based on Si or W with polymer coatings to mask the underlying material. Silicon carbide (SiC) is a semiconductor that has been proven to be highly biocompatible, and this chemically inert, physically robust material system may provide the longevity and reliability needed for the INI community. The design, fabrication, and preliminary testing of a prototype all-SiC planar microelectrode array based on 4H-SiC with an amorphous silicon carbide (a-SiC) insulator is described. The fabrication of the planar microelectrode was performed utilizing a series of conventional micromachining steps. Preliminary data is presented which shows a proof of concept for an all-SiC microelectrode device.

The nonlinear property of SiC multilayer devices under Ultra Violet (UV) irradiation is used to design an optical processor for indoor positioning. The transducers combine the simultaneous demultiplexing operation with the photodetection and self-amplification. Moreover, we present a way to achieve indoor positioning using the parity bits and the navigation syndrome. A 4 bit representation with the original string colour message and the transmitted 7 bit string, the encoding and decoding accurate positional information processes and the design of SiC navigation syndrome generators are discussed. The visible multilateration method estimates the device’s position by using the MUX signal received from several, non-collinear transmitters. The location and motion information is found by mapping position and estimates the location areas.

It has been shown that changes in blood glucose can be sensed with an RF antenna made from silicon carbide (SiC) operating at 10 GHz. Therefore a SiC antenna patch could operate as an active sensor or as a passive sensor at 5.8 GHz for a continuous glucose monitoring system. The properties of SiC make this material ideal for biomedical applications and devices as it is not only biocompatible but also has great sensing capability. The permittivity and conductivity of the blood is glucose dependent. Thus implanting the antenna in the fatty tissue facing the muscle and blood results should result in a shift of the resonant frequency of the antenna with glucose levels. In the active sensor approach, a power supply and internal in-vivo circuitry with protection would be required. In the passive sensor approach, external circuitry sends a signal to the implanted antenna and is received back again, detecting any signal variations. Simulations in HFSS™ show that that an implanted sensor placed 2 mm from the muscle in fatty tissue would experience an approximate shift in resonant frequency of 12.3 MHz for a blood glucose change of 500 mg/dl.

The range of polishing-induced subsurface damage remaining in a commercially available production grade 4H-SiC (0001) epi-ready substrate was evaluated by the observation from the (-1100) cleavage plane using two kinds of highly strain-sensitive characterization methods. Firstly, the analysis using electron backscattered diffraction (EBSD) with a submicron spatial resolution was conducted on the exposed cross sectional plane. Then, for the further quantitative evaluation excluding the influence of roughness or contamination of the cleavage plane, a synchrotron X-ray micro-diffraction experiment was carried out. The range of the subsurface damage evaluated in those experiments was ensured by confirming none of additional strain inserted at the cleavage, as compared with the damage-free substrate prepared by high temperature thermal etching. As a result, the depth of the residual strained region below polishing-induced scratches at the surface was estimated to be in the range of a few microns, which is much deeper than the previously reported value of 100 nm by cross-sectional transmission electron microscopy. It suggests a potential of EBSD for the conventional tool to characterize even a small amount of strain in SiC single crystal.