Skip to main content Accessibility help
×
Home

Point-Defect Migration in Crystalline Si: Impurity Content, Surface and Stress Effects

  • S. Coffa (a1), S. Libertino (a1), A. La Magna (a1), V. Privitera (a1), G. Mannino (a2) and F. Priolo (a2)...

Abstract

The results of several recent experiments aimed at assessing the room temperature migration properties of interstitials (D) and vacancies (V) in ion implanted crystalline Si are reviewed. We show that combining the results of ex-situ techniques (deep level transient spectroscopy and spreading resistance profilometry) and in-situ leakage current measurements new and interesting information can be achieved. It has been found that at room temperature I and V, generated by an ion beam, undergo fast long range migration (with diffusivities higher than 10−1 cm2/sec) which is interrupted by trapping at impurities (C, O) or dopant atoms and by recombination at surface. Analysis of two-dimensional migration of point defects injected through a photolithographically defined mask shows that a strong I recombination (characterized by a coefficient of 30 μm−1) occurs at the sample surface. Moreover, we have found that the strain field induced by an oxide or a nitride mask significantly affects defect migration and produces a strong anisotropy of the defect diffusivity tensor. Finally, using in-situ leakage current measuremens, performed both during and just after ion irradiation, the time scale of point defect evolution at room temperature has been determined and defect diffusivities evaluated. The implications of these results on our current understanding of defect and diffusion phenomena in Si are discussed.

Copyright

References

Hide All
1. Fahey, I. P. M., Griffin, P. B. and Plummer, J. D., Rev. Mod. Phys. 61 (2), 289, 1989.
2. Larsen, K. Kyllesbech, Privitera, V., Coffa, S., Priolo, F., Campisano, S. U., and Camera, A., Phys. Rev. Lett. 76, 1493 (1996)
3. Privitera, V., Coffa, S., Priolo, F.. Larsen, K. Kyllesbech and Mannino, G., Appl. Phys. Lett. 68, 3422 (1996)
4. Bronner, G. B. and Plummer, J. D., J. Appl. Phys. 61, 5286, 1987.
5. Lim, D. R., Rafferty, C. S. and Klemens, F. P., Appl. Phys. Lett. 67, 2302 (1995)
6. Aziz, M.J., Applied Physics Letters 70, 2810 (1997)
7. Car, R., Kelly, P. J., Oshiyama, A. and Pantelides, S. T., Thirteenth Int. Conf. On Defects in Semiconductors, edited by Kimerling, L. C., Parsey, J. M. Jr., Warrendale, A.I.M.E., 269, 1985.
8. Gilmer, G. H., de la Rubia, T. Diaz, Stock, D. M. and Jaraiz, M., Nucl. Instr. and Meth. B 102, 247, 1995
9. Watkins, G. D., Electronic Structure and Properties of Semiconductors, edited by Schröter, W., vol. 407, Materials Science and Technology, edited by Cahn, Harsen and Kramer, VHC, Weinherin, (1991).
10. Van Vechten, J. A., Phys. Rev. B 10, 1482, 1974.
11. Watkins, G. D., Deep Centers in Semiconductors, edited by Pantelides, S., Gordon and Breach, New York, 147, 1986, and references therein.
12. Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Poate, J. M., Luftman, H. S. and Haynes, T. E., J. Appl. Phys. 81, 6031 (1997)
13. Zhang, L. H., Jones, K. S., Chi, P. H. and Simons, D. S., Appl. Phys. Lett. 67, 2025 (1995)
14. Kinoshita, H., Huang, T. H. and Kwong, D. L., Appl. Phys. Lett. 75, 8213 (1994)
15. Ayres, J. R. and Brotherton, S. D., J. Appl. Phys. 71, 2702 (1992)
16. Watkins, G. D., in Deep Centers in Semiconductors, edited by Pantelides, S. T. (Gordon and Breach, New York, 1986), Chapter 3; and Watkins, G. D., in Defects and Diffusion in Silicon Processing, Mat. Res. Soc. Symp. Proc. 469, edited by T. Diaz de La Rubia, S. Coffa, P. Stolk and C. Rafferty (1997)
17. Watkins, G. D., Phys. Rev. B 12, 5824 (1975).
18. Coffa, S., Privitera, V., Priolo, F., Libertino, S. and Mannino, G., J. Appl. Phys. 81, 1639 (1997)
19. Hu, S. M., J. Appl. Phys. 70, R53 (1991)
20. Cowern, N. E. B., Zalm, P. C., van der Sluis, P., Gravesteijn, D. J. and de Boer, W. B., Phys. Rev. Lett. 72, 2585 (1994)
21. Chaudhry, S. and Law, M. E., J. Appl. Phys. 82, 1138 (1997)
22. Aziz, M.J., in Defects and Diffusion in Silicon Processing, Mat. Res. Soc. Symp. Proc. 469, edited by T. Diaz de La Rubia, S. Coffa, P. Stolk and C. Rafferty, pag. 3746 (1997).
23. Vandervorst, W., Clarysse, T., De Wolf, P., Hellemans, L., Snauwaert, J., Privitera, V. and Raineri, V. Nucl. Instr. and Meth. B96, 123, (1995)
24. Coffa, S., Magna, A. La, Privitera, V. and Mannino, G., Appl. Phys. Lett. (in press)
25. Jaraiz, M., Gilmer, G. H., Poate, J. M. and de la Rubia, T. Diaz, Appl. Phys. Lett 68, 409, 1996
26. GermanA, R. S. and Campisano, S. U., Appl. Phys. Lett. 60, 1726 (1992).

Point-Defect Migration in Crystalline Si: Impurity Content, Surface and Stress Effects

  • S. Coffa (a1), S. Libertino (a1), A. La Magna (a1), V. Privitera (a1), G. Mannino (a2) and F. Priolo (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed