6 results
Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem
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- Journal:
- Microscopy and Microanalysis / Volume 22 / Issue S3 / July 2016
- Published online by Cambridge University Press:
- 25 July 2016, pp. 650-651
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- July 2016
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Influence of AlN Overgrowth on GaN Nanostructures Grown by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y4.4
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- 2003
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Structural and Optical Properties of GaN Quantum Dots
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y4.7
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- 2003
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Growth of Quaternary AlInGaN/GaN Heterostructures by Plasma Assisted MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L4.5
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- 2002
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Formation of quantum dots by self-rearrangement of metastable 2D GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L8.8
- Print publication:
- 2002
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In as a Surfactant for the Growth of AlGaN/GaN Heterostructures by Plasma Assisted MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L6.1
- Print publication:
- 2002
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