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Influence of AlN Overgrowth on GaN Nanostructures Grown by Molecular Beam Epitaxy

  • N. Gogneau (a1), E. Monroy (a1), D. Jalabert (a1), E. Sarigiannidou (a1), J. L. Rouvière (a1) and B. Daudin (a1)...

Abstract

The effects of AlN overgrowth on the structural properties of GaN nanostructures grown at 750°C by plasma-assisted molecular beam epitaxy have been investigated using Rutherford backscattering spectroscopy and transmission electron microscopy. The capping process induces a remarkable change in the dimension of the nanostructures. We demonstrate that the thickness/size reduction occurs at the first stage of AlN overgrowth and affects only the top GaN/AlN interface. This phenomenon is attributed to an exchange mechanism between Al atoms from the cap layer and Ga atoms in the nanostructures and depends on the strain state of the nanostructures.

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Influence of AlN Overgrowth on GaN Nanostructures Grown by Molecular Beam Epitaxy

  • N. Gogneau (a1), E. Monroy (a1), D. Jalabert (a1), E. Sarigiannidou (a1), J. L. Rouvière (a1) and B. Daudin (a1)...

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