We propose a simple and practical solution to remove artificial contrast inhibiting direct interpretation of atomic arrangements in aberration-corrected TEM. The method is based on a combination of “image subtraction” for elimination of nonlinear components in images and newly improved “image deconvolution” for proper compensation of nonflat phase contrast transfer function. The efficiency of the method is shown by experimental and simulation data of typical materials such as gold, silicon, and magnesium oxide. The hypothetical results from further improvements of TEM instruments are also simulated. It is concluded that we can approach actual atomic structures by using the present method, that is, a proper combination of a Cs corrector, image subtraction, and image deconvolution processes.

We report magnetic properties of [Ca2CoO3-δ]0.62CoO2 (Ca349) powders with various average size and the Bi- and Sr-doping effects on thermoelectric properties for the magnetically grain-aligned and densified Ca349 thick films. Magnetic anisotropy at 300 K depended on the initial average size of Ca349 powders and decreased with the decrease in the size. This presumably suggests that distortion of crystal structure was induced by a ball-milling process and led to the change of magnetic anisotropy. On the Bi- and Sr-doping effects, an obvious enhancement of thermoelectric properties did not emerge in the case of the Sr-doping, whereas the enhancement was observed for the Bi-doped Ca349 thick films. However, a drastic decrease of magnetic anisotropy was caused by the Bi-doping. For usage of the p-type layer in multilayered thermoelectric module, tuning of the Bi-doping levels in which both enhancement of thermoelectric properties and a certain level of magnetic anisotropy are achieved is required.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

InxGa1−xAs quantum dots in GaP(100) crystals prepared by the OMVPE technique are observed along the [011] direction with a newly developed 200-kV spherical aberration(Cs)-corrected HRTEM, a 200-kV annular dark-field (ADF)-STEM, and a 200-kV conventional HRTEM equipped with a thermal field-emission gun. The dots are 6–10 nm in size and strongly strained due to the misfit of about 9% with the GaP substrate and GaP cap layer. All of the cross-sectional high-resolution electron micrographs show dumbbell images of Ga and P atomic columns separated by 0.136 nm in well-oriented and perfect GaP areas, but the interpretable images are limited to those taken with the Cs-corrected HRTEM and ADF-STEM with Fourier filtering of the images. The Cs-corrected HRTEM and ADF-STEM are comparable from the viewpoint of interpretable resolution. A detailed comparison between the Cs-corrected HRTEM images and the simulated ones with electron incidence tilted by 1° to 5° from the [011] zone axis gives information on local lattice bending in the dots from the images around 0.1 nm resolution. This becomes one of the useful techniques newly available from electron microscopy with sub-Ångstrom resolution.

The dynamic change of the dangling bond (db) intensity in hydrogenated amorphous silicon (a-Si:H) during H2 and Ar plasma treatments was observed using an in-situ electron-spinresonance (ESR) technique. The experimental results show that the time to reach the steady state between gas-phase H atoms and the a-Si:H surface is less than 1 sec, and Ar plasma treatments create a top-surface region with an extremely high db density.