People from different areas of the insular Caribbean and the coastal zone of mainland South America moved in and out of the Lesser Antilles throughout the archipelago's history before the European invasion. Successive migrations, the development of networks of human mobility, and the exchange of goods and ideas, as well as constantly shifting inter-insular alliances, created diverse ethnic and cultural communities in these small islands. We argue that these processes of alliance-building and ethnicity can be best understood through the concept of creolization. We examine this idea first in terms of the cultural interactions reflected in the pottery traditions that emerged among the Windward Islands before colonization, and second by analyzing the historiographical and emerging archaeological information available on the formation of the Indigenous Kalinago/Kalipuna and Garifuna identities from the late fifteenth to the early seventeenth centuries. Finally, we discuss the colonial and contemporary Afro-Caribbean pottery traditions on these islands, in particular Grenada and Saint Lucia. The embedding of this study in a deep historical framework serves to underscore the divergent origins and developmental trajectories of the region. including the disruption of the Indigenous cultures and the impact of European colonization, the African diaspora, and the emergence of today's cosmopolitan Caribbean cultural tradition.

The purpose of this study was to determine the effect of altering substrate availability on metabolism and performance during intense cycling. Seven highly trained men ingested a random order of three isoenergetic meals 90 min before cycling at 80 % maximal oxygen uptake (VO2max) for 20 min (about 310 W), followed by a 600 kJ time trial lasting about 30 min. Meals consisted of either 1·2 g saturated fat/kg body mass (BM) with 3500 U heparin intravenously (HIFAT) to elevate circulating plasma free fatty acid (FA) concentration, 2·5 g carbohydrate/kg BM (CHO) to elevate plasma glucose and insulin concentrations or 2·5 g carbohydrate+20 mg nicotinic acid/kg BM (NA) to suppress lipolysis and reduce free FA concentration. HIFAT elevated free FA concentration (HIFAT 1·3 (SEM 0·2), CHO 0·2 (sem 0·1), NA 0·1 (sem 0·1) mm; P<0·001), lowered the RER (HIFAT 0·94 (sem 0·01), CHO 0·97 (sem 0·01), NA 0·98 (sem 0·01); P<0·01) and increased the rate of fat oxidation (HIFAT 24 (sem 3), CHO 12 (sem 2), NA 8 (sem 3) μmol/kg per min; P<0·01) during the 20 min ride. Marked differences in fat availability and fuel utilisation, however, had little effect on performance in the subsequent time trial (HIFAT 320 (sem 16), CHO 324 (sem 15), NA 315 (sem 13) W). We conclude: (1) increased fat availability during intense cycling increases the rate of fat oxidation; but (2) the reduction in the rate of carbohydrate oxidation in the presence of high circulating plasma free FA is unlikely to enhance intense exercise performance lasting about 1 h; (3) substrate selection during intense (about 80 % VO2max) exercise is dominated by carbohydrate oxidation.

While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 1010 cm−2. The E2 Raman active phonon modes were observed in the GaN films.

While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 1010 cm-2. The E2 Raman active phonon modes were observed in the GaN films.

Diamond electrodes possess unique chemical stability, a very wide potential window of water stability, and low background currents. These properties give rise to numerous possible applications, for example, electrosynthesis and electrodestruction reactions at extreme potentials and environmental conditions and as a sensor electrode in aggressive environments. Furthermore, the study of semiconducting diamond electrodes promises to lead to greater understanding of the surface chemistry of diamond and of electronic levels and surface states in doped diamond. In this paper the reactivity of diamond electrodes and their use in a molten salt environment, as a sensor element, and for characterizing diamond are discussed.

Forty-four schizophrenic patients were followed up for five years after their first admission to hospital for a first episode of illness. Thirteen (30%) of 43 patients had not relapsed; 28 of the 30 patients who did relapse did so within the first 42 months. The relapses occurred despite antipsychotic drug therapy. Also, 24% of patients had at least one course of ECT. Only 19% of the patients at five years were in open employment; unemployment was strongly associated with relapse. Eighteen per cent had neither relapses nor schizophrenic symptoms at follow-up. Poor outcome at five years was associated with greater psychological distress among relatives at first admission. At five years 43% of relatives continued to show case level psychological stress.

This is the initial report of a prospective study by computerised tomography brain scan of first episode schizophrenia. Twenty-seven patients who met Research Diagnostic Criteria for schizophrenia were compared with volunteer controls on ventricular: brain ratio, sulcal: brain volume ratio, and the widths of third ventricle and Sylvian and interhemispheric fissures. The results provide evidence that sulcal enlargement, but not ventricular abnormalities, may be detected at first admission for schizophrenic illness, and are discussed in relation to findings from other studies.

Of 49 schizophrenic patients followed up 12 months after their first admission to hospital, only about 45% had experienced no relapse and had no schizophrenic symptoms; a poorer outcome was more often found in Feighner positive than Feighner negative schizophrenic patients. The patients' overall level of unemployment had more than doubled to 51%. In patients whose acute episodes responded to treatment, pimozide taken once weekly as maintenance therapy was as effective as intramuscular flupenthixol decanoate, but tardive dyskinesia appeared in two patients receiving weekly pimozide; the repeat psychometric assessment at 12 months found modest improvements, i.e. no evidence of intellectual decline, in Matrices, Block Design, and Digit Copying tests. Forty per cent of relatives still showed significant psychological distress, which correlated with patients' schizophrenic symptoms, and the relatives' social functioning remained poorer than that of a normal community sample.

An assessment of 31 main care-giving relatives living with schizophrenics was carried out using the General Health Questionnaire and the Social Adjustment Scale by Self Report. More than 75% of relatives had a high probability of themselves being a psychiatric case. Relatives also showed social role dysfunction and impairment especially marked in social and leisure activities. Relatives' distress was related to the level of symptoms in patients, as assessed by the Present State Examination.