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Scanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).
2D materials play a special role in the race to make smaller and smaller devices. Their unique and strong in-plane bonding makes them impervious to diffusion into other layers and provides excellent thickness control. Their van der Waal's bonding with other monolayers or substrates allows for heterostructures unattainable by any other technique. This is reflected by the abundant popularity of research into graphene and other 2D materials. In this review article, we will describe the out-of-plane properties of graphene and functionalized graphene. We will use three specific examples to illustrate how these out-of-plane properties can be used in spintronic devices, in section “Graphene as a Tunnel Barrier” we will describe a magnetic tunnel junction (MTJ) based on graphene. Section “Graphene Based MTJs” will describe the spin injecting properties of a graphene tunnel barrier on silicon. Section “Graphene in Semiconductor Spintronic Devices” describes how you can use functionalized graphene to make a homoepitaxial graphene device. The second part of this article reviews monolayer transition-metal dichalcogenides (TMDs). First, we will show how TMDs are grown and specifically how we can grow large-area TMDs by chemical vapor deposition. Secondly, we will describe the optical properties of several TMDs and compare the results from several authors. Finally, we choose a chemical sensor as a specific example to show how TMDs can be used in a device.
In semiconductor epitaxy, a central challenge for the formation of ordered arrays of nanostructures, such as quantum dot islands, is the realization of processing routes to control surface-mediated growth mechanisms with high spatial precision and reproducibility across macroscopic lengths. To this end we have recently demonstrated a simple route for the directed assembly of heteroepitaxial islands based on rudimentary metal patterning. Here we show that the same metal patterns on the silicon surface that lead to island ordering radically modify island morphology resulting in shapes such as nanorods and truncated pyramids that are set by the choices of metal species and substrate orientation. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays.
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