33 results
Behavior of W and WSix Contact Metallization on n- and p- Type GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 684-690
- Print publication:
- 1999
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Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric
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- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 183
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- 1999
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Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO2
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- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 259
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- 1999
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Behavior of W and WSix Contact Metallization on n- and p- Type GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.39
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- 1998
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Metal Contact On Nitride Based Materials
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- MRS Online Proceedings Library Archive / Volume 514 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 451
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- 1998
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A Novel Bi-Layer Photoresist T-Gate Technique To Reduce Gate Resistance.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 483 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 271
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- 1997
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Plasma Damage Effects in InAlN Field Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 385
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- 1997
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Progress on 850 nm Flip Chip Bondable VCSEL for Optical Interconnects
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- Journal:
- MRS Online Proceedings Library Archive / Volume 486 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 79
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- 1997
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Dry Etch Damage In InN, InGaN and InAIN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 163
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- 1996
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Electron Cyclotron Resonance Etching of SiC in SF6/O2 and NF3 /O2 Plasmas
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- MRS Online Proceedings Library Archive / Volume 421 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 251
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- 1996
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Passivation of Carbon Doping in InGaAs During ECR-CVD of SiNx
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- Journal:
- MRS Online Proceedings Library Archive / Volume 421 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 321
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- 1996
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AFM Analysis of ECR Dry-Etched Ingap, Alinp and Algap
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- Journal:
- MRS Online Proceedings Library Archive / Volume 406 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 209
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- 1995
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Ion Milling and Reactive Ion Etching of III-V Nitrides
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- Journal:
- MRS Online Proceedings Library Archive / Volume 339 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 179
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- 1994
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High Density Magnetically Confined Dry Etching of Metallization and Dielectrics in Gaas Device Technology
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- MRS Online Proceedings Library Archive / Volume 337 / 1994
- Published online by Cambridge University Press:
- 25 February 2011, 749
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- 1994
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The Role of Hydrogen in Current-Induced Degradation of GaAs/AlGaAs Heterojunction Bipolar Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 338 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 161
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- 1994
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Small Diameter Dry Etched Via Holes in GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 153
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- 1993
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Reliability of Implant-Isolation Regions in Highly-Doped GaAs-Based Structures
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- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 337
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- 1993
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Low Temperature SiNx as a Sacrificial Layer in Novel Device Fabrication
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- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 161
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- 1993
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Formation of Long Wavelength InP Laser MESAS
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- MRS Online Proceedings Library Archive / Volume 300 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 169
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- 1993
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Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 03 September 2012, 797
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- 1992
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