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Electron Cyclotron Resonance Etching of SiC in SF6/O2 and NF3 /O2 Plasmas

Published online by Cambridge University Press:  10 February 2011

F. Ren ,
J. M. Grow ,
M. Bhaskaran ,
J. W. Lee ,
C. B. Vartuli ,
J. R. Lothian  and
J. R. Flemish
F. Ren
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ
J. M. Grow
Affiliation:
New Jersey Institute of Technology, Newark, NJ
M. Bhaskaran
Affiliation:
University of Florida, Gainesville, FL
J. W. Lee
Affiliation:
University of Florida, Gainesville, FL
C. B. Vartuli
Affiliation:
University of Florida, Gainesville, FL
J. R. Lothian
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ
J. R. Flemish
Affiliation:
Army Research Laboratory, Fort Monmouth, NJ
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Abstract

Etching of β-SiC with electron cyclotron resonance (ECR) system was investigated. Anisotropic and smooth etching of SiC was demonstrated with SF6/O2 based discharges. The root-mean-square roughness increases from 35 nm to 56 nm for as deposit and etched sample, respectively. The addition of small amount oxygen enhanced the etch rate of SiC slightly, but further increase of oxygen content reduced the etch rate which resulted from dilution of F ion and free radical densities. NF3/O2 based discharges also showed same trends and produced anisotropicly etching. However, the smoothness is not as good as SF6/O2 based discharges.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 251
Copyright
Copyright © Materials Research Society 1996

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