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Dual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.
150keV Si* ions and 160keV P* ions were implanted at 200°C with doses ranging from 5x1013 to 1x1015/cm2 to study the effect of dual implantations on the electrical properties of Fe doped InP. Samples encapsulated with Si3N4 films of about 1000Å were annealed in a halogen tungsten lamp RTA system under flowing N2 at different temperatures from 700 to 900°C for 5s. It has been found that Si*+P* dual implantations into InP can result in an enhanced activation, particularly significant at high dose of implantation. The maximum dopant activation and average electron mobility for Si*+P* dual implants at a dose of 1×1015/cm2 are 70% and 750cm2/vs, which corresponds to a peak electron concentration of 5×1019/cm3 while that for Si* single implant at the same dose are 29% and 870cm2/vs, which corresponds to a peak electron concentration of 1.2×10 19/cm3. The improvement of the electrical properties is discussed in terms of amphoteric behavior of silicon in InP.
The damage behavior of <100>-Si implanted with P2+ and P+ ions at equivalent energies were investigated by 2MeV He* backscattering and channeling analysis. Different incident energies (25-90keV/atom) and intermediate doses (1013–1014/cm2) were used for the implantation with sample holder being kept at temperatures ranging from 77k to 483K. It has been shown that the damage created by P2* implants is always greater than that of P2+ implants when the dosage is below the threshold fluence at which amorphization takes place. This damage enhancement phenomenon is strongly related to implantation temperature. A striking damage enhancement induced by 90 keV/atom P2+ implants in the surface region of the sample was observed, and it has been attributed to the multiple collision effect between diatomic ions and host atoms.
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