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Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

Published online by Cambridge University Press:  26 February 2011

Honglie Shen ,
Genqing Yang ,
Zuyao Zhou ,
Guanqun Xia  and
Shichang Zou
Honglie Shen
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Genqing Yang
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zuyao Zhou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Guanqun Xia
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Shichang Zou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
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Abstract

Dual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 325
Copyright
Copyright © Materials Research Society 1991

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