28 results
Are the Materials Properties of Indiumnitride Dominated by Defects?
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- Journal:
- MRS Online Proceedings Library Archive / Volume 994 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0994-F02-01
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- 2007
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Recombination Related to Two-Dimensional Electron Gas of AlxGa1-xN/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y10.47
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- 2003
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P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 8 / 2003
- Published online by Cambridge University Press:
- 13 June 2014, e6
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- 2003
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Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 722 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, K3.3
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- 2002
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Direct Electron Beam Processing Of Semiconductor Nanostructures
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- MRS Online Proceedings Library Archive / Volume 727 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, R11.11
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- 2002
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Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source
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- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F1.2
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- 2002
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Fast Proton Damage Effects on the Luminescence Properties of High-Quality GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I11.36.1
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- 2001
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Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer
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- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T4.10.1
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- 2000
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The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1−xN quantum wells
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, e1
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- 2000
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The influence of the sapphire substrate on the temperature dependence of the GaN bandgap
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 289
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- 1999
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The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 187
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- 1998
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High-pressure investigation of InGan quantum wells.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 399
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- 1998
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Effect of internal absorption on cathodoluminescence from GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e4
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- 1998
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Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 447
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- 1997
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Three-Dimensional Finite Element Simulation of Electro and Stress Migration Effects in Interconnect Lines
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- MRS Online Proceedings Library Archive / Volume 473 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 329
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- 1997
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Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum Well Structures
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- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 299
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- 1997
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Photoluminescence Characterization of p-type GaN:Mg
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 673
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- 1997
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Surface States at LT GaAs-n+ GaAs Interfaces
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- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 85
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- 1992
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Surface Acoustic Wave Detection of Large Lattice Relaxation of Metastable EL2 in LT-GaAs
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- MRS Online Proceedings Library Archive / Volume 241 / 1991
- Published online by Cambridge University Press:
- 15 February 2011, 131
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- 1991
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A New Approach to Grow Strain-Free GaAs on Si
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- MRS Online Proceedings Library Archive / Volume 202 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 609
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- 1990
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