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Photoluminescence Characterization of p-type GaN:Mg

  • Dorina Corlatan (a1), Joachim Krüger (a1), Christian Kisielowski (a1), Ralf Klockenbrink (a1), Yihwan Kim (a1), G. S. Sudhir (a1), Yann Peyrot (a1), Michael Rubin (a1) and Eicke R. Weber (a1)...

Abstract

We report on results of low-temperature photoluminescence measurements performed on GaN films, grown by molecular beam epitaxy (MBE) on sapphire substrates. The GaN films are either Mg doped (p-type) or consist of a Mg-doped layer on top of a Si doped GaN layer (n-type). In the p-doped samples, the sharpness of the donor-acceptor-pair transition is striking, three phonon replicas are clearly resolved. A transition band occurs around 3.4 eV, which becomes dominant for samples with an np-layer structure. The position and the composition of the near band edge transitions are influenced by the growth of the buffer layers. Depending on the growth conditions a transition at 3.51 eV can be observed.

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Photoluminescence Characterization of p-type GaN:Mg

  • Dorina Corlatan (a1), Joachim Krüger (a1), Christian Kisielowski (a1), Ralf Klockenbrink (a1), Yihwan Kim (a1), G. S. Sudhir (a1), Yann Peyrot (a1), Michael Rubin (a1) and Eicke R. Weber (a1)...

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