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The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells

  • Piotr Perlin (a1), Christian Kisielowski (a1), Laila Mattos (a1), Noad A. Shapiro (a1), Joachim Kruger (a1), Jinwei Yang (a2) and Eicke R. Weber (a1)...

Abstract

A photoluminescence from a multiquantum GaN/InxGa1−xN/GaN well structure (x varies between 0.1 to 0.4) was investigated at various temperatures, pumping powers. While the temperature dependence of the peak position indicates normal band to band character of radiative recombination, the large pumping power induced “blue”shift of the peak position (up to 200 meV) can be observed. This kind of shift cannot be easily explained by the band tailing effect but is most likely the result of the screening of the strain-induced piezoelectric field. By evaluating the theoretical values of the piezoelectric filelds in the quantum well, we can show that in order to account for the experimental results we have to assume the partial relaxation of the strain.

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The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells

  • Piotr Perlin (a1), Christian Kisielowski (a1), Laila Mattos (a1), Noad A. Shapiro (a1), Joachim Kruger (a1), Jinwei Yang (a2) and Eicke R. Weber (a1)...

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