21 results
Improvement of Pin Photodiodes on the Soi Layer by Rapid Thermal Annealing
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- MRS Online Proceedings Library Archive / Volume 378 / 1995
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- 26 February 2011, 731
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- 1995
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Contactless Evaluation of the Surface Recombination Property of Silicon with an Ion-Implanted Layer
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- MRS Online Proceedings Library Archive / Volume 378 / 1995
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- 26 February 2011, 641
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- 1995
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Evaluation of the Bonded Silicon-on-Insulator Wafer with Lifetime Measurement Using a Non-Contact Laser-Microwave Method
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- MRS Online Proceedings Library Archive / Volume 347 / 1994
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- 15 February 2011, 179
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- 1994
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Contactless Characterization of the Surface Property of the Si+-Implanted GaAs
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- MRS Online Proceedings Library Archive / Volume 347 / 1994
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- 15 February 2011, 283
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- 1994
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Contactless Evaluation Of The Stress In X-Ray Mask Wafers (SiN/Si) Using A Laser/Microwave Method.
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- MRS Online Proceedings Library Archive / Volume 306 / 1993
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- 15 February 2011, 91
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- 1993
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Characteristics of Silicon Photodetector Using Epitaxial Wafer with High Resistivity and Long Recombination Lifetime
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- MRS Online Proceedings Library Archive / Volume 302 / 1993
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- 21 February 2011, 561
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- 1993
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Contactless Characterization of The Surface Condition of Sulfur-Treated Semi-Insulating GaAs
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- MRS Online Proceedings Library Archive / Volume 315 / 1993
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- 21 February 2011, 169
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- 1993
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Point Defects in a Directly-Bonded Wafer, and its Comparison with the Bonded Soi Wafers
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- MRS Online Proceedings Library Archive / Volume 302 / 1993
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- 21 February 2011, 567
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- 1993
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Study of Electrical Properties of Defects in Soi Films by Wafer Bonding
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- MRS Online Proceedings Library Archive / Volume 262 / 1992
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- 03 September 2012, 349
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- 1992
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Effects of Rapid Thermal Annealing on SiNx Capped MBE GaAs
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- MRS Online Proceedings Library Archive / Volume 262 / 1992
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- 03 September 2012, 905
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- 1992
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Production of Midgap Electron Traps by Ga Out-Diffusion in Rapid-Thermal-Processed GaAs with Sio2 Encapsulants
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- MRS Online Proceedings Library Archive / Volume 240 / 1991
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- 26 February 2011, 853
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- 1991
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Automatic Determination of In-Depth Profiles of Recombination Lifetime in Epitaxial Si Layer with P+-N−-N+ Stripe Test Pattern Diodes
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- MRS Online Proceedings Library Archive / Volume 225 / 1991
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- 15 February 2011, 265
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- 1991
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Variation of Thermal Donors in Diffused Wafers by rapid Thermal Annealing
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- MRS Online Proceedings Library Archive / Volume 224 / 1991
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- 28 February 2011, 75
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- 1991
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Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers
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- MRS Online Proceedings Library Archive / Volume 224 / 1991
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- 28 February 2011, 95
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- 1991
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Characterization of GaAs-InAs Heterostructures by Micro-Raman Spectroscopy
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- MRS Online Proceedings Library Archive / Volume 221 / 1991
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- 25 February 2011, 465
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- 1991
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Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing
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- Journal of Materials Research / Volume 4 / Issue 2 / April 1989
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- 31 January 2011, pp. 241-243
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- April 1989
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Deep-Level Transient Spectroscopy Studies of Rapid Thermal Processed GaAs with Sio2 Encapsulant
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- MRS Online Proceedings Library Archive / Volume 146 / 1989
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- 25 February 2011, 431
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- 1989
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Effects of Rapid Thermal Processing on SiO2/GaAs Interfaces
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- MRS Online Proceedings Library Archive / Volume 126 / 1988
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- 21 February 2011, 215
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- 1988
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Rapid-Thermal-Processing Induced Deep Level Traps and their Spatial Distribution in MBE GaAs
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- MRS Online Proceedings Library Archive / Volume 92 / 1987
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- 28 February 2011, 361
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- 1987
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Optical Current DLTS with a Bipolar Rectangular Weighting Function for High-Resistivity Neutron Transmutation Doped Silicon
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- MRS Online Proceedings Library Archive / Volume 69 / 1986
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- 25 February 2011, 349
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- 1986
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