Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-21T12:37:31.064Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep-Level Transient Spectroscopy Studies of Rapid Thermal Processed GaAs with Sio2 Encapsulant

Published online by Cambridge University Press:  25 February 2011

Masayuki Katayama ,
Yutaka Tokuda ,
Nobuo Ando ,
Akio Kitagawa ,
Akira Usami ,
Yajiro Inoue  and
Takao Wada
Masayuki Katayama
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Yutaka Tokuda
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Nobuo Ando
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Akio Kitagawa
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa–ku, Nagoya 466, Japan
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa–ku, Nagoya 466, Japan
Yajiro Inoue
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Takao Wada
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa–ku, Nagoya 466, Japan
Get access

Abstract

Effects of rapid thermal processing (RTP) on SiO2/GaAs interfaces have been studied with X-ray photoelectron spectroscopy, capacitance-voltage measurements and deep-level transient spectroscopy. SiO2 films of 50, 200 and 1250 nim thickness have been deposited on GaAs. RTP has been performed at 760 and 910°C for 9 s. The rapid diffusion of Ga through the SiO2 film occurs, and the As loss and the formation of the As layer near the interface are observed. The decrease of the carrier concentration occurs in all RTP samples. Five electron traps EAI (Ec – 0.27 eV), EA2 (Ec – 0.32 eV), EA3 (Ec – 0.47 eV), EA4 (Ec – 0.58 eV) and EL2 (Ec – 0.78 eV) are produced by RTP. It is considered that the production of the trap EL2 is closely related to the Ga outdiffusion into the SiO2 film and the As indiffusion from the pile-up of elemental As near the interface. Effects of SiO2 film thickness on RTP-SiO2/GaAs are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 431
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Singh, R., J. Appl. Phys. 63, R59 (1988).CrossRefGoogle Scholar
2. Tokuda, Y., Katayama, M., Ando, N., Kitagawa, A., Usami, A., Inoue, Y., Takematsu, H., and Wada, T., Mat. Res. Soc. 126, 215 (1988).CrossRefGoogle Scholar
3. Kuzuhara, M. and Kohzu, H., Appl. Phys. Lett. 44, 527 (1984).CrossRefGoogle Scholar
4. Haynes, T. E., Chu, W. K., and Picraux, S. T., Appl. Phys. Lett. 50, 1071 (1987).CrossRefGoogle Scholar
5. Katayama, M., Usami, A., Wada, T., and Tokuda, Y., J. Appl. Phys. 62, 528 (1987).CrossRefGoogle Scholar
6. Kitagawa, A., Usami, A., Wada, T., Tokuda, Y., and Kano, H., J. Appl. Phys. 65, 606 (1989).CrossRefGoogle Scholar
7. Lang, D. V., J. Appl. Phys. 45, 3023 (1974).CrossRefGoogle Scholar
8. Tokuda, Y., Shimizu, N., and Usami, A., Japan. J. Appl. Phys. 18, 309 (1979).CrossRefGoogle Scholar
9. Kalkur, T. S., Lu, Y. C., and Araujo, C. A. Paz de, Mat. Res. Soc. 92, 461 (1987).CrossRefGoogle Scholar
10. Bourgoin, J. C., Bardeleben, H. J. von, and Stievenard, D., J. Appl. Phys. 64, R65 (1988).CrossRefGoogle Scholar