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Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers

Published online by Cambridge University Press:  28 February 2011

Akira Usami ,
Taichi Natori ,
Akira Ito ,
Takahide Sugiyama ,
Seiya Hirota ,
Yutaka Tokuda  and
Takao Wada
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, Japan
Taichi Natori
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, Japan
Akira Ito
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, Japan
Takahide Sugiyama
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, Japan
Seiya Hirota
Affiliation:
Japan Silicon Co., Ltd., Noda 278, Japan
Yutaka Tokuda
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470-03, Japan
Takao Wada
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466, Japan
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Abstract

Introduction of oxygen during thermal oxidation and production of defects by rapid thermal annealing (RTA) in n-type epitaxial Si layers were studied with deep-level transient spectroscopy measurements. We use oxygen-related thermal donors (TDs) as a monitor for introduction of oxygen in silicon epitaxial layers. It is found that oxygen is introduced from the substrate into the epitaxial layer after thermal annealing. The TD was almost annihilated by RTA at .700°C. However, a shallow trap (Ec−0.073±0.005 eV) was induced by RTA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 95
Copyright
Copyright © Materials Research Society 1991

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