16 results
The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressure and temperature
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y5.32
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- 2003
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High-Temperature Illumination-Induced Metastability in Undoped Semi-Insulating GaN Grown by Metalorganic Vapor Phase Epitaxy
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L11.33
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- 2002
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Activation of Mg acceptors in GaN:Mg monitored by electron paramagnetic resonance spectroscopy.
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L11.59
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- 2002
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Effect of growth temperature on the microstructure of the nucleation layers of GaN grown by MOCVD on (1120) sapphire
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.19
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- 2002
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Microstructure of GaN Grown on (1120) Sapphire
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G3.9
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- 2000
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Current-Voltage Characteristics of Ungated AlGaN/GaN Heterostructures
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 489
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- 1999
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Correlation of Drain Current Pulsed Response with Microwave Power Output in AlGaN/GaN HEMTs
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 541
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- 1999
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High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 315
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- 1998
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A Kinetic Model for GaN Growth
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
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- 10 February 2011, 167
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- 1997
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Location Of Residual Donors In GaN Epitaxial Layers
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 561
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- 1997
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Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al2O3
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 543
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- 1996
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Surface Energy Constraints for Heteroepitaxial Growth on Compliant Substrates: Morphology of GaN Grown on Sc Layers
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 347
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- 1996
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Si Implantation and Annealing OF GaN FOR n-Type Layer Formation
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- MRS Online Proceedings Library Archive / Volume 423 / 1996
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- 15 February 2011, 183
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- 1996
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Persistent Photoconductivity in n-Type GaN
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 531
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- 1996
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Effect of Carrier Gas on the Surface Morphology and Mosaic Dispersion for GaN Films by Low-Pressure MOCVD
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 261
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- 1995
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Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 405
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- 1995
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