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Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al2O3

  • E. R. Glaser (a1), T. A. Kennedy (a1), A. E. Wickenden (a1), D. D. Koleske (a1) and J. A. Freitas (a1)...

Abstract

We have made an attempt to obtain electronic and atomic structure information on the residual defects that exist in high-resitivity GaN epitaxial layers from optically-detected magnetic resonance (ODMR) experiments performed on the broad 3.0 and 2.2 eV photoluminescence (PL) bands observed from these films. The first observation of magnetic resonance on this 3.0 eV band reveals two ODMR signals. The first resonance is sharp (FWHM ∼ 3.5 mT) with g ∼ 1.950 and is assigned to effective-mass (EM) donors based on previous studies. The second feature is much broader (FWHM ∼18 mT) with a donor-like g-value of ∼ 1.977. This new resonance may be associated with partially EM-like donor states located ∼ 54 - 57 meV below the conduction band edge proposed recently to be involved in this 3.0 eV PL band.

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Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al2O3

  • E. R. Glaser (a1), T. A. Kennedy (a1), A. E. Wickenden (a1), D. D. Koleske (a1) and J. A. Freitas (a1)...

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