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Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena

  • N. V. Edwards (a1), M. D. Bremser (a1), T. W. Weeks (a1), R. S. Kern (a1), H. Liu (a2) (a3), R. A. Stall (a2), A. E. Wickenden (a4), K. Doverspike (a3) (a4), D. K. Gaskill (a4), J. A. Freitas (a5), U. Rossow (a6), R. F. Davis (a1) and D. E. Aspnes (a6)...

Abstract

We report the dielectric functions of various GaN samples as measured by spectroscopic ellipsometry. Structure related to the A and B excitons is resolved at room temperature, in principle allowing strain to be assessed. However, the data indicate that dead-layer and dispersion effects are present, preventing a simple interpretation. We discuss various complications including the Edn/dE contribution to dispersion, which is important for laser action. Our data appear to indicate that the spin-orbit splitting of GaN is about 15 meV, somewhat larger than the currently accepted value of about 11 meV.

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Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena

  • N. V. Edwards (a1), M. D. Bremser (a1), T. W. Weeks (a1), R. S. Kern (a1), H. Liu (a2) (a3), R. A. Stall (a2), A. E. Wickenden (a4), K. Doverspike (a3) (a4), D. K. Gaskill (a4), J. A. Freitas (a5), U. Rossow (a6), R. F. Davis (a1) and D. E. Aspnes (a6)...

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