6 results
Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1736 / 2014
- Published online by Cambridge University Press:
- 18 December 2014, mrsf14-1736-t02-03
- Print publication:
- 2014
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Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12νm Range
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- Journal:
- MRS Online Proceedings Library Archive / Volume 607 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 75
- Print publication:
- 1999
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unneling effects in InAs/GaInSb superlattice infrared photodiodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 484 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 123
- Print publication:
- 1997
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AlGaInP/GaInAs/GaAs Modfet Devices With Self-Aligned P+-GaAs Gate Structure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 326 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 329
- Print publication:
- 1993
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A Novel GaAs Bipolar Transistor Structure with GaInP-Hole Injection Blocking Barrier
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- Journal:
- MRS Online Proceedings Library Archive / Volume 240 / 1991
- Published online by Cambridge University Press:
- 26 February 2011, 493
- Print publication:
- 1991
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Properties of WSix-Schottky Diodes on n-Type GaAs Sputtered under UHV Background Conditions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 144 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 619
- Print publication:
- 1988
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