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Properties of WSix-Schottky Diodes on n-Type GaAs Sputtered under UHV Background Conditions

Published online by Cambridge University Press:  26 February 2011

W. Pletschen ,
G. Kaufel ,
M. Maier ,
E. Olander ,
J. Wiegert ,
K. H. Bachem  and
H. S. Rupprecht
W. Pletschen
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Eckerstr.4, D-7800 Freiburg, DFed. Rep. of Germany
G. Kaufel
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Eckerstr.4, D-7800 Freiburg, DFed. Rep. of Germany
M. Maier
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Eckerstr.4, D-7800 Freiburg, DFed. Rep. of Germany
E. Olander
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Eckerstr.4, D-7800 Freiburg, DFed. Rep. of Germany
J. Wiegert
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Eckerstr.4, D-7800 Freiburg, DFed. Rep. of Germany
K. H. Bachem
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Eckerstr.4, D-7800 Freiburg, DFed. Rep. of Germany
H. S. Rupprecht
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Eckerstr.4, D-7800 Freiburg, DFed. Rep. of Germany
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Abstract

Multilayered WSix films for use as gates in a self-aligned refractory gate process of GaAs MESFETs have been RF sputtered onto GaAs wafers under UHV background conditions in order to study their structure and morphology as well as their contact electrical properties. Annealed films deposited at 300°C with single layer thickness of 6 and 3 nm for W and Si respectively have a smooth morphology free from cracks and blisters and show a good adhesion to the substrate. Schottky diodes prepared on n-GaAs exhibit an almost excellent I-V characteristics with a barrier height of 0.73 V and an ideality factor of 1.11. In addition E - and D-FETs fabricated on implanted s.i. wafers have good electrical parameters with transconductances of 200 mS/mm at 1 μm gate length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 619
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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