10 results
Site Specific TEM Specimen Preparation for Characterization of Extended Defects in 4H-SiC Epilayers
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- Journal:
- Microscopy and Microanalysis / Volume 20 / Issue S3 / August 2014
- Published online by Cambridge University Press:
- 27 August 2014, pp. 344-345
- Print publication:
- August 2014
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Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B04-06
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- 2010
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Investigation of SiO2 Cap for Al Implant Activation in 4H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B06-02
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- 2010
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Intrinsic defects in high purity semi-insulating 6H SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B05-07
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- 2006
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The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J5.20
- Print publication:
- 2004
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Characterization of Defects Generated During Boron Diffusion in SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J5.26
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- 2004
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Al/Ni And Al/Ti Ohmic Contact To P-type SiC Diffused Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.19
- Print publication:
- 2000
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Point and planar defect formation in SiC during PVT growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.1
- Print publication:
- 2000
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Dislocation Content of Etch Pits in Hexagonal Silicon Carbide
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.4
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- 2000
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One of Many Sources of Defect Generation in SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.3
- Print publication:
- 2000
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