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Intrinsic defects in high purity semi-insulating 6H SiC

Published online by Cambridge University Press:  01 February 2011

D. V. Savchenko ,
E. N. Kalabukhova ,
S. N. Lukin ,
Tangali S. Sudarshan ,
Yuri I. Khlebnikov ,
William C. Mitchel  and
S. Greulich-Weber
E. N. Kalabukhova
Affiliation:
katia@i.kiev.ua, Institute of Semiconductor Physics, NASU, Kiev, Kiev, 03028, Ukraine
S. N. Lukin
Affiliation:
katia@i.kiev.ua, Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev, Kiev, 03028, Ukraine
Tangali S. Sudarshan
Affiliation:
sudarsha@engr.sc.edu, University of South Carolina, Department of Electrical Engineering, Columbia, SC, 29208, United States
Yuri I. Khlebnikov
Affiliation:
ykhlebnikov@intrinsicsemi.com, Intrinsic Semiconductor Corp., 22660 Executive Dr., Suite 101, Dulles, VA, 20166, United States
William C. Mitchel
Affiliation:
william.mitchell@wpafb.af.mil, Air Force Research Laboratory, AFRL/MLPS, Wright Patterson AFB, OH, 45433-7707, United States
S. Greulich-Weber
Affiliation:
greulich-weber@physik.upb.de, University of Paderborn, Department of Physics, Paderborn, Germany, D-33098, Germany
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Abstract

Electron paramagnetic resonance (EPR) and photo EPR measurements were performed on undoped semi-insulating (SI) 6H SiC material grown by the physical vapor transport (PVT) method. EPR lines from a carbon-related surface defect, two photosensitive high temperature stable intrinsic defects with S=1/2 and shallow nitrogen and boron were observed. The EPR spectrum of the intrinsic defect labeled XX was observed in the dark and consists of three single lines XX1, XX2, XX3 due to three inequivalent sites in the 6H SiC. The second defect labeled PP appeared in EPR spectrum during photo-excitation of the SI 6H SiC and consisted of a single EPR line. The photo EPR data placed the energy level of the defects in the region EV + 1.24 ÷ 1.29 eV. The EPR parameters and symmetry behavior of XX agree well with those of the carbon vacancy-related Ky center observed in p-type electron irradiated 6H SiC and we tentatively identify the XX defect with VC+. The electronic processes occurring in undoped SI 6H SiC under photo-excitation are also described.

Keywords

electron spin resonancedefectssemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B05-07
Copyright
Copyright © Materials Research Society 2006

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