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The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 796 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, V2.8
- Print publication:
- 2003
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- Article
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