GaN nanowires were successfully synthesized on Si(111) substrates by
ammoniating the Ga2O3/ZnO films at 900 °C. The structure,
morphology and optical property of the as-prepared GaN nanowires were
studied by X-ray diffraction (XRD), scanning electron microscopy (SEM),
field-emission transmission electron microscope (FETEM), Fourier transform
infrared spectrum (FTIR) and fluorescence spectrophotometer. The results
show that the GaN nanowires have a hexagonal wurtzite structure with lengths
of about several micrometers and diameters ranging from 30 nm to 120 nm. The
representative photoluminescence spectrum at room temperature exhibited a
strong emission peak at 374.1 nm and two weak emission peaks at 437.4 nm and
473.3 nm. Finally, the growth mechanism is also briefly discussed.