Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-10T22:29:15.571Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of one-dimensional GaN nanorods on Si(111) substrates by magnetron sputtering

Published online by Cambridge University Press:  08 November 2006

Shoubin Xue ,
Huizhao Zhuang ,
Chengshan Xue  and
Lijun Hu
Shoubin Xue
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Huizhao Zhuang*
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Chengshan Xue
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Lijun Hu
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
*
zhuanghuizhao@sdnu.edu.cn
Get access

Abstract

GaN nanorods have been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating the Ga2O3/ZnO films at 950 °C in a quartz tube. The GaN nanorods have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared (FTIR) system and fluorescence spectrophotometer. The results show that the nanorods are pure hexagonal GaN wurtzite structure with lengths of about several micrometers and diameters ranging from 100 nm to 750 nm, and the growth direction of GaN nanorods is perpendicular to (101) plane. The photoluminescence (PL) spectrum indicates that the good emission property for the nanorods. Finally, the growth mechanism is also briefly discussed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 37 , Issue 1 , January 2007 , pp. 53 - 55
Copyright
© EDP Sciences, 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Nakamura, S., Science 281, 956 (1998) CrossRef
Morales, A.M., Lieber, C.M., Science 279, 208 (1998) CrossRef
Arakawa, Y, Sakaki, H., Appl. Phys. Lett. 40, 939 (1982) CrossRef
Han, W., Fan, S., Li, Q., Hu, Y., Science 277, 1287 (1997) CrossRef
Han, W.Q., Redlich, P., Ernst, F., Ruhle, M., Appl. Phys. Lett. 76, 652 (2000) CrossRef
Han, W.Q., Zett, A., Appl. Phys. Lett. 80, 303 (2002) CrossRef
Duan, X.F., Lieber, C.M., J. Am. Chem. Soc. 122, 188 (2002) CrossRef
Perlin, P., Jauberthiecarillon, C., Itie, J.P., Miguel, A.S., I.Grzegory, A. Polian, Phys. Rev. B 45, 83 (1992) CrossRef
Yang, L., Xue, Ch., Zhuang, H. et al., Int. J. Mod. Phys. 46, 1639 (2002)
Sun, Yong, Miyasato, Tatsuro, Wigmore, J.K., J. Appl. Phys. 85, 3377 (1999) CrossRef
B.K. Ridley, in Quantum Process in Semiconductors (Clarendon, Oxford, 1982), pp. 62–66
Monemar, B., Phys. Rev. B 10, 676 (1974) CrossRef
Chen, Xiaolong, Li, Jianye, Yingge, , Cao, et al., Adv. Mater. 12, 1432 (2000) 3.0.CO;2-X>CrossRef
Shi, W.S., Zheng, Y.F. et al., Chem. Phys. Lett. 345, 377 (2001) CrossRef
Peng, H.Y., Zhou, X.T., Wang, N. et al., Chem. Phys. Lett. 327, 263 (2000) CrossRef
Xue, Chengshan, Wu, Yuxin, Zhuang, Huizhao et al., Physica E 30, 179 (2005) CrossRef