24 results
Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C03-07
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- 2008
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A Comparative Analysis of Iridium Oxide Nanowires in Electrical Detection of Biochemical Reactions
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- MRS Online Proceedings Library Archive / Volume 1095 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1095-EE08-22
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- 2008
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RRAM electronics and Switching Mechanism
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- MRS Online Proceedings Library Archive / Volume 997 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0997-I04-01
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- 2007
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Resistance Switching In Ferroelectric Materials
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- MRS Online Proceedings Library Archive / Volume 997 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0997-I05-02
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- 2007
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Device Structures and Charicterization of one Tansistor Ferroelectric Memory Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 830 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, D2.10
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- 2004
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Relaxation of Strained SiGe on Insulator by Direct Wafer Bonding
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- Journal:
- MRS Online Proceedings Library Archive / Volume 809 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, B8.22
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- 2004
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Selective Deposition of C-axis Oriented Pb5Ge3O11 on the Patterned High k Gate Oxide by MOCVD Processes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 786 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E9.9/C9.9
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- 2003
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Selective Deposition of C-axis Oriented Pb5Ge3O11 on the Patterned High k Gate Oxide by MOCVD Processes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 784 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, C9.9/E9.9
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- 2003
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Integration Processes and Properties of One Transistor Memory Devices
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- MRS Online Proceedings Library Archive / Volume 747 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, T4.6/U9.6
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- 2002
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Integration Processes and Properties of One Transistor Memory Devices
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- MRS Online Proceedings Library Archive / Volume 748 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, U9.6/T4.6
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- 2002
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Stability Improvement of Nickel Silicide with Co Interlayer on Si, Polysilicon and SiGe
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- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K6.9
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- 2001
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Integration Processes and Properties of Pt/Pb5Ge3O11/(Zr, Hf)O2/Si One Transistor Memory Devices
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- Journal:
- MRS Online Proceedings Library Archive / Volume 688 / 2001
- Published online by Cambridge University Press:
- 17 March 2011, C11.2.1
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- 2001
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Characteristics of Memory Window and Retention Properties of One Transistor Memory Devices
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- MRS Online Proceedings Library Archive / Volume 688 / 2001
- Published online by Cambridge University Press:
- 17 March 2011, C4.3.1
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- 2001
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X-Ray Techniques for Silicides
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- Journal:
- MRS Online Proceedings Library Archive / Volume 670 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, K6.2
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- 2001
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Highly Stable Ir-Ta-O Electrode for Ferroelectric Material Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 655 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, CC2.3.1
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- 2000
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The Properties of Mfmos and MFOS Capacitors with High K Gate Oxides for one Transistor Memory Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 655 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, CC3.10.1
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- 2000
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The Microstructure, Phase and Ferroelectric Properties of PZT Thin Films on Oriented Multilayer Electrodes
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- MRS Online Proceedings Library Archive / Volume 596 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 199
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- 1999
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Prevention of Corner Voiding in Selective CVD Deposition of Titanium Silicide on SOI Device
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- MRS Online Proceedings Library Archive / Volume 564 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 29
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- 1999
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Thermal Stability of Ir/TaN Electrode/Barrier on Thin Gate Oxide for MFMOS one Transistor Memory Application
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- MRS Online Proceedings Library Archive / Volume 596 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 67
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- 1999
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Ultrathin Gate Oxides with Shallow Nitrogen Implants as Effective Barriers to Boron Diffusion
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 39
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- 1999
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