6 results
A Review of the Role of Excess si in SIO2 at the Growing Oxide Interface.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 716 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, B1.13
- Print publication:
- 2002
-
- Article
- Export citation
Fluorinated Gate Oxide Films Utilized in Polysilicon Thin Film Transistors
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 284 / 1992
- Published online by Cambridge University Press:
- 22 February 2011, 437
- Print publication:
- 1992
-
- Article
- Export citation
Plasma Etching of Tungsten Silicide Structures Using NF3-Halocarbon Etchants
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 190 / 1990
- Published online by Cambridge University Press:
- 21 February 2011, 291
- Print publication:
- 1990
-
- Article
- Export citation
Rates of Phase TransformationsR.H. Doremus (Academic Press), 1985)
-
- Journal:
- MRS Bulletin / Volume 12 / Issue 1 / February 1987
- Published online by Cambridge University Press:
- 29 November 2013, p. 80
- Print publication:
- February 1987
-
- Article
-
- You have access
- Export citation
Nitridation Induced-Reactions in Si and SiO2
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 59 / 1985
- Published online by Cambridge University Press:
- 28 February 2011, 561
- Print publication:
- 1985
-
- Article
- Export citation
Formation of Interstitial Defects in High Concentration Shallow Phosphorous Diffusions in Si.
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 14 / 1982
- Published online by Cambridge University Press:
- 15 February 2011, 101
- Print publication:
- 1982
-
- Article
- Export citation