4 results
Luminescence energy and carrier lifetime as a function of applied biaxial strain in InGaN/GaN quantum-well structures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 722 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, K3.3
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- 2002
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Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T4.10.1
- Print publication:
- 2000
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The influence of the sapphire substrate on the temperature dependence of the GaN bandgap
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 289
- Print publication:
- 1999
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The Magnitude of the Piezoelectric Effect in InGaN Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 187
- Print publication:
- 1998
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