4 results
Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 27 November 2012, pp. 104-112
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- 14 January 2013
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Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 30 August 2012, pp. 94-103
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- 14 January 2013
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Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 24 July 2012, pp. 129-135
- Print publication:
- 14 January 2013
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Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B03-07
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- 2010
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